D1213UK.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 D1213UK 데이타시트 다운로드

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TetraFET
D1213UK
MECHANICAL DATA
EB
D
F
8
7
6
5
O
J
KL
C
1
2
A
3
4
Q
N
M
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 5 Source
PIN 2 Drain
PIN 6 Gate
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM mm
Tol. Inches Tol.
A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45°
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
6W – 7.2V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
58W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99

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D1213UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 6W
VDS = 7.2V
f = 500MHz
VDS = 0
VDS = VGS
ID = 2A
IDQ = 0.5A
0.5
1.6
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
120 pF
80 pF
8 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 3°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99

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D1213UK
10 100
8 80
Pout
6
60
Drain Efficiency
W4
2
f = 500MHz
Idq = 0.5A
Vds = 7.2V
40 %
20
00
0 0.5 1 1.5 2 2.5
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
10 11
8 10
Pout
W
6
4
2
f = 500MHz
Idq = 0.5A
Vds = 7.2V
9
Gain
8 dB
7
06
0 0.5 1 1.5 2 2.5
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
-15
-20
-25
IMD3
dBc -30
-35
-40
f1 = 500.0 MHz
f2 = 500.1 MHz
Vds = 7.2V
Idq = 0.5A
-45
0 2 4 6 8 10
Pout W PEP
Figure 3 – IMD vs. Output Power.
D1213UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
ZL
500 2.3 - j0.4 2.1 - j1.9
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99