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2SJ175
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S

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2SJ175
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
Pch*2
Tch
Tstg
Ratings
–60
±20
–10
–40
–10
25
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SJ175
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
4.0
Typ
0.13
0.18
6.5
900
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse test
tr
td(off)
tf
VDF
trr
460
130
8
65
170
105
–1.1
200
Max Unit
—V
—V
±10
–250
–2.0
0.18
µA
µA
V
0.25
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –10 V*1
ID = –5 A, VGS = –4 V*1
ID = –5 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –5 A, VGS = –10 V,
RL = 6
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ172
3

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2SJ175
Power vs. Temperature Derating
30
20
10
0 50 100 150
Case Temperature TC (°C)
–100
–30
–10
–3
–1.0
–0.3
–0.1
Maximum Safe Operation Area
10 µs
PW
= 10 ms (1 shot)
Operation in this area
is limited by RDS(on)
Ta = 25°C
–0.3 –1.0 –3 –10 –30 –100
Drain to Source Voltage VDS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ
100 µ
TC = 25°C
θch–c (t) = γS (t) · θch–c
θch–c = 5.0°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
4

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2SJ175
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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