2SJ243.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2SJ243 데이타시트 다운로드

No Preview Available !

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
The 2SJ243 is a P-channel vertical type MOS FET that is driven
at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SJ243 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be directly driven by 3-V IC
• Can be automatically mounted
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
0.1+–00..015
D
G
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
S
0 to 0.1
0.6
0.75 ± 0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Topt
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW 10 ms
Duty cycle 50 %
3.0 cm2 × 0.64 mm, ceramic substrate used
RATING
–30
±7
±100
±200
200
150
–55 to +80
–55 to +150
UNIT
V
A
mA
mA
mW
˚C
˚C
˚C
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996

No Preview Available !

2SJ243
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-Off Voltage
VGS(off)
Forward Transfer Admittance
|yfs|
Drain to Source On-State Resistance RDS(on)1
Drain to Source On-State Resistance RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
TEST CONDITIONS
VDS = –30 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = –3 V, ID = –10 µA
VDS = –3 V, ID = 10 mA
VGS = –2.5 V, ID = –1 mA
VGS = –4.0 V, ID = –10 mA
VDS = –5.0 V, VGS = 0, f = 1 MHz
VDD = –5V, ID = –10 mA
VGS(on) = –5 V, RG = 10
RL = 500
MIN.
–1.6
20
TYP.
±0.1
–1.9
30
55
20
16
13
2
10
40
130
80
MAX.
–1.0
±3.0
–2.3
100
25
UNIT
µA
µA
V
mS
pF
pF
pF
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
RG
PG.
0
VGS
τ
τ = 1 µs
Duty cycle 1 %
DUT
RL
VDD
VGS
Gate
Voltage
Waveform
10 %
ID
td(on)
VGS(on)
90 %
tr td(off)
tf
Drain
Current
Waveform
0
10 %
ID
90 %
10 %
90 %
2

No Preview Available !

TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
–100
–10
TRANSFER CHARACTERISTICS
VDS = –3 V
Pulsed
150 ˚C
–1 TA = –25 ˚C
25 ˚C
–0.1
75 ˚C
–0.01
–0.001
–1.0
–1.5 –2.0 –2.5 –3.0 –3.5
VGS - Gate to Source Voltage - V
–4.0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulsed
30
ID = –0.1 A
20
ID = –10 mA
10
0 –1 –2 –3 –4 –5 –6 –7 –8
VGS - Gate to Source Voltage - V
2SJ243
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
3.0 cm2 × 0.64 mm
Using ceramic substrate
200
160
120
80
40
0 30 60 90 120 150 180 210
TA - Ambient Temperature - ˚C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
400 VDS = –3 V
Pulsed
TA = 75 ˚C
100 25 ˚C
–25 ˚C
30
150 ˚C
10
3
1
–0.5 –1.0
–3.0 –10 –30
ID - Drain Current - mA
–100 –200
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
120
VGS = –2.5 V
Pulsed
100
75 ˚C
80
TA = –25 ˚C 25 ˚C
150 ˚C
60
40
20
–0.3
–0.6 –1
–2
–5
ID - Drain Current - mA
–10
3

No Preview Available !

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
130
VGS = –4 V
Pulsed
100
50 75 ˚C 25 ˚C
TA = 150 ˚C
0
–0.5 –1
–3
–25 ˚C
–10 –30
–60
ID - Drain Current - mA
SWITCHING CHARACTERISTICS
500
VDD = – 5 V
VGS = – 5 V
Rin = 10
200 tr
100
50 tf
td(on)
20
td(off)
10
–6 –10
–30 –50 –100
ID - Drain Current - mA
–300
2SJ243
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
60
VDS = –5 V
f = 1 MHz
30
Ciss
10
Coss
3
1
0.5
–0.3
Crss
–1 –3 –10
VDS - Gate to Source Voltage - V
–40
–200
–100
–30
–10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = 0
Pulsed
–3
–1
–0.3
–0.1
–0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3
VSD - Source to Drain Voltage - V
4

No Preview Available !

REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SJ243
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5