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2SJ349
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ349
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 4-V gate drive
z Low drainsource ON resistance : RDS (ON) = 33 m(typ.)
z High forward transfer admittance : |Yfs| = 20 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
20
80
45
800
20
4.5
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.44 mH, RG = 25 , IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-16

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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 10 A
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turnon time
Switching time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD ≈ −48 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V,
dIDR / dt = 50 A / μs
Marking
2SJ349
Min
60
0.8
10
Typ.
50
33
20
2800
450
1300
Max
±10
100
2.0
90
45
Unit
μA
μA
V
V
m
S
pF
— 15 —
— 35 —
ns
— 25 —
— 120 —
— 90 —
— 65 —
— 25 —
nC
Min Typ. Max Unit
— — 20 A
— — 80 A
— — 1.7 V
— 75 — ns
— 83 — μC
J349
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SJ349
3 2006-11-16

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2SJ349
PD – Tc
50
40
30
20
10
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
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2SJ349
SAFE OPERATING AREA
100
ID MAX. (PULSED)*
50
30 ID MAX.
(CONTINUOUS)
100 μs*
1 ms*
10 ms*
10
5
DC OPERATION
3 Tc = 25°C
* SINGLE
NONREPETITIVE
1 PULSE Tc = 25°C
Curves must be
derated linearly with
0.5 increase in
temperature.
0.3
1 3
10
VDSS MAX.
30
100
DRAIN-SOURCE VOLTAGE VDS (V)
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