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2SJ547
Silicon P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.16 typ.
4 V gete drive devices
High speed switching
Outline
TO–220FM
ADE-208-658A (Z)
2nd. Edition
Jun 1998
D
G
S
123
1. Gate
2. Drain
3. Source

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2SJ547
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalenche current
I Note3
AP
Avalenche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Ratings
–60
±20
–10
–40
–10
–10
8.5
20
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
–1.0
3.5
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
t rr
Note: 4. Pulse test
Typ
0.16
0.23
5.5
400
220
75
10
45
65
50
–1.2
70
Max
–10
±10
–2.0
0.21
0.36
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –5A, VGS = –10V Note4
ID = –5A, VGS = –4V Note4
ID = –5A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –5A
RL = 6
IF = –10A, VGS = 0
IF = –10A, VGS = 0
diF/ dt = 50A/µs
2

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Main Characteristics
2SJ547
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
–100
–50
Maximum Safe Operation Area
10 µs
–20
–10
–5
–2
–1
–0.5
PW
DC
Operation in
this area is
= 10
Operation
ms (1 shot)
(Tc=25
limited by R DS(on)
–0.2
–0.1 Ta = 25 °C
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–10 –4 V
–10 V
–8 –6 V
–5 V
–3.5 V
–6
–4 –3 V
–2 VGS = –2.5 V
0 –2 –4 –6 –8 –10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–10
V DS = –10 V
–8
–6
–4
Tc = 75 °C
25 °C
–2
–25 °C
0 –1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3

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2SJ547
Drain to Source Saturation Voltage vs.
–2.0
Gate to Source Voltage
–1.6
–1.2
–0.8 –5 A
–2 A
–0.4
–1 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
VGS = –4 V
0.2
0.1
0.05
–10 V
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30
Drain Current I D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.4
0.3
VGS = –4 V
0.2
–2 A
I D = –5 A
–1 A
–5 A
-1,–2 A
0.1 –10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
10
Ta = –25 °C
3
25 °C
1
75 °C
0.3 V DS = –10 V
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I D (A)
4

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2SJ547
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1
–0.3
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
–1 –3 –10 –20
Reverse Drain Current I DR (A)
5000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
30 Crss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
V DD = –10 V
V DS
–25 V
–20 –50 V
–4
I D = –10 A
–40 –8
V GS
–60 –12
V DD = –10 V
–25 V
–80 –50 V –16
–100
0
8 16 24 32
Gate Charge Qg (nc)
–20
40
1000
300
100
30
10
Switching Characteristics
V GS = –10 V, V DD = –30 V
Pw = 5 µs, duty < 1 %
t d(off)
tf
t r t d(on)
3
1
–0.1
–0.3 –1 –3 –10 –20
Drain Current I D (A)
5