2SJ551L.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 2SJ551L 데이타시트 다운로드

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2SJ551(L),2SJ551(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.050typ.
Low drive current.
4V gate drive devices.
High speed switching.
Outline
LDPAK
D
G
S
ADE-208-647B (Z)
3rd. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain

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2SJ551(L),2SJ551(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalanche current
I Note3
AP
Avalanche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Ratings
–60
±20
–18
–72
–18
–18
27
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
–1.0
10
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
t rr
Note: 4. Pulse test
Typ
0.050
0.070
16
1300
650
180
14
95
190
135
–1.0
70
Max
–10
±10
–2.0
0.065
0.110
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –9A, VGS = –10V Note4
ID = –9A, VGS = –4V Note4
ID = –9A, VDS = -10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –9A
RL =3.33
IF = –18A, VGS = 0
IF = –18A, VGS = 0
diF/ dt =50A/µs
2

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Main Characteristics
2SJ551(L),2SJ551(S)
Power vs. Temperature Derating
80
60
40
20
0 50 100 150 200
Case Temperature Tc (°C)
1000
Maximum Safe Operation Area
300
100 10 µs
30
10
3
1
0.3
OtlihmpisietearadretiboaynisRinDS(oDnCP)WOp=e(rT1ac0tio=mn12s51(m°10Cs0sh) oµts)
0.1 Ta = 25 °C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–10 V –6 V
–20
–4 V
Pulse Test
–16 –3.5 V
–3 V
–12
–8
–2.5 V
–4
VGS = –2 V
0 –2 –4 –6 –8 –10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–20
V DS = –10 V
Pulse Test
–16
–12
25°C
Tc = 75°C
–8
–25°C
–4
0 –1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
3

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2SJ551(L),2SJ551(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3.0
Pulse Test
–2.5
–2.0
–1.5
–1.0
–0.5
I D = –20 A
–10 A
–5 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = –4 V
–10 V
0.02
0.01
–1
–2 –5 –10 –20 –50 –100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.30
Pulse Test
0.25
0.20
0.15
I D = –20 A –5, –10 A
0.10 VGS = –4 V
0.05
0
–40
–10 V
–5, –10, –20 A
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
25 °C
3
75 °C
1
0.3
0.1
–0.1
–0.3 –1 –3
Drain Current
V DS = –10 V
Pulse Test
–10 –30 –100
I D (A)
4

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2SJ551(L),2SJ551(S)
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
–0.5
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
–1 –2 –5 –10 –20
Reverse Drain Current I DR (A)
10000
3000
1000
300
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–20
–50 V
–4
–40 VGS
VDS
–60
VDD = –50 V
–25 V
–80 –10 V
–100 I D = –18 A
0 16 32 48 64
Gate Charge Qg (nc)
–8
–12
–16
–20
80
1000
500
Switching Characteristics
VGS = –10 V, V DD = –30 V
PW = 5 µs, duty < 1 %
t d(off)
200
tf
100
50 t r
20 t d(on)
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I D (A)
5