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2SJ588
Silicon P Channel MOS FET
High Speed Switching
Features
Low on-resistance
RDS =2.8 typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 typ. (VGS = -4 V , ID = -50 mA)
4 V gate drive device.
Outline
SPAK
ADE-208-802 (Z)
1st.Edition.
June 1999
D
3
2
G
1
S
123
1. Source
2. Drain
3. Gate

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2SJ588
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10 µs, duty cycle 1%
Ratings
-30
±20
-100
-400
-100
300
150
–55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
-30
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
-1.3
68
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Note: 2. Pulse test
See characteristics curves of 2SJ575
Typ
2.8
5.7
105
25
20
8
10
15
40
45
Max
±5
-1
-2.3
3.3
7.9
Unit
V
V
µA
µA
V
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = -100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = -30 V, VGS = 0
ID = -10µA, VDS = -5 V
ID = -50 mA,VGS = -10 V Note 2
ID = -50 mA,VGS = -4 V Note 2
ID = -50 mA, VDS = -10 V Note 2
VDS = -10 V
VGS = 0
f = 1 MHz
ID = -50 mA, VGS = -10 V
RL = 200
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Main Characteristics
2SJ588
Power vs. Temperature Derating
400
300
200
100
0 50 100 150 200
Ambient Temperature Ta ( °C)
Maximum Safe Operation Area
-5
-2
-1.0
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-0.005
10 µs
100 µs
1ms,10 ms
DC
Operation in this area
is limited by RDS(on)
Operation
-0.002
-0.001 Ta=25 °C
-0.0005
-0.05 -0.1 -0.2 -0.5 -1.0 -2
-5 -10 -20 -50
Drain to Source Voltage VDS (V)
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2SJ588
Package Dimensions
4.2 Max
2.2 Max
Unit: mm
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
EIAJ
JEDEC
SPAK
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2SJ588
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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