2SJ610.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 2SJ610 데이타시트 다운로드

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2SJ610
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.85 (typ.)
· High forward transfer admittance: |Yfs| = 18 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 250 V)
· Enhancement-mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
-250
-250
±20
-2.0
-4.0
20
180
-2.0
2.0
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = -50 V, Tch = 25°C (initial), L = 75 mH, IAR = -2.0 A,
RG = 25 W
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2002-09-11

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2SJ610
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
ïYfsï
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = -250 V, VGS = 0 V
ID = -10 mA, VGS = 0 V
VDS = -10 V, ID = -1 mA
VGS = -10 V, ID = -1.0 A
VDS = -10 V, ID = -1.0 A
VDS = -10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
¾ ¾ ±10
¾ ¾ -100
-250 ¾
¾
-1.5 ¾ -3.5
¾ 1.85 2.55
0.5 1.8 ¾
¾ 381 ¾
¾ 52 ¾
¾ 157 ¾
mA
mA
V
V
W
S
pF
tr
10 V
VGS
ton 0 V
ID = 1.0 A VOUT
¾5¾
¾ 20 ¾
RL = 100 W
ns
tf ¾ 6 ¾
VDD ~- 100 V
toff Duty <= 1%, tw = 10 ms
¾ 36 ¾
Qg VDD ~- -200 V, VGS = -10 V,
Qgs ID = -2.0 A
Qgd
¾ 24 ¾
¾ 11 ¾ nC
¾ 13 ¾
Source-Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
¾
¾
IDR = -2.0 A, VGS = 0 V
IDR = -2.0 A, VGS = 0 V,
dIDR/dt = 100 A/ms
Min Typ. Max Unit
¾ ¾ -2.0 A
¾ ¾ -4.0 A
¾ ¾ 2.0 V
¾ 120 ¾
ns
¾ 540 ¾ nC
Marking
J610
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-09-11

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ID – VDS
-2 Common source
Tc = 25°C, Pulse test
-1.5
-10-8 -6
-15 -5
-5.5 -4.5
-1
-0.5
VGS = -4 V
0
0 -1 -2 -3 -4
Drain-source voltage VDS (V)
2SJ610
ID – VDS
-4 Common source
Tc = 25°C, Pulse test
-6
-15 -8
-3 -10
-5.5
-5
-2
-4.5
-1
VGS = -4 V
0
0 -5 -10 -15 -20
Drain-source voltage VDS (V)
-4
Common source
VDS = -10 V
Pulse test
-3
ID – VGS
-2
25
-1
100 Tc = -55°C
0
0 -1 -2 -3 -4 -5 -6
Gate-source voltage VGS (V)
-10
-8
-6
-4
-2
0
0
VDS – VGS
Common source
Tc = 25°C
Pulse test
-2
ID = -1 A
-2 -4 -6 -8
Gate-source voltage VGS (V)
-10
10
Common source
VDS = -10 V
5 Pulse test
ïYfsï – ID
3 Tc = -55°C
25 100
1
0.5
0.3
0.1
-0.1
-0.3 -0.5
-1
-3
Drain current ID (A)
-5
-10
10
Common source
Tc = 25°C
5 VGS = 10 V
Pulse test
3
RDS (ON) - ID
1
0.5
0.3
0.1
-0.01
-0.03
-0.1 -0.3
-1
Drain current ID (A)
-3
-10
3 2002-09-11

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RDS (ON) – Tc
5
Common source
VGS = -10 V
Pulse test
4
-2 A
3
ID = -1 A
2
1
0
-80 -40
0
40 80 120 160
Case temperature Tc (°C)
1000
100
Capacitance – VDS
Ciss
Coss
Crss
10
CVGomSmo=n0sVource
f = 1 MHz
Tc = 25°C
1
-0.1 -0.3 -1 -3 -10 -30
Drain-source voltage VDS (V)
-100
2SJ610
-100
Common source
Tc = 25°C
Pulse test
IDR – VDS
-10
-1
VGS = -10 V
-5 V -3 V
0, 1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain-source voltage VDS (V)
Vth – Tc
-5 CVIDDom=Sm-o1=n-ms1Ao0uVrce
-4 Pulse test
-3
-2
-1
0
-80 -40
0
40 80 120 160
Case temperature Tc (°C)
PD – Tc
40
30
20
10
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input/output characteristics
-300
Common source
ID = -2 A
Tc = 25°C
-200 VDS
Pulse test
-30
-25
-20
-100
0
0
-15
-50
VGS
VDD = -200 V
-100
-10
-5
-0
5 15 25 35
Total gate charge Qg (nC)
4 2002-09-11

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2SJ610
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.1
0.05
0.05 0.02
0.03 0.01
Single pulse
0.01
0.005
0.003
0.001
10 m
100 m
1m
rth – tw
10 m
100 m
Pulse width tw (S)
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1 10 100
Safe operating area
-100
-50
-30
-10
-5 ID max (pulsed) *
-3
1 ms *
-1
-0.5
-0.3
DC
100 ms *
-0.1
* Single nonrepetitive pulse
-0.0
Tc = 25°C
-0.0 Curves must be derated linearly
with increase in temperature.
-0.0
1
3 5 10
30
VDSS max
50 100
300 500 1000
Drain-source voltage VDS (V)
EAS – Tch
200
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
Test circuit
RG = 25 W
VDD = -50 V, L = 75 mH
BVDSS
IAR
VDD
VDS
Wave form
5 2002-09-11