2SK1300.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 2SK1300 데이타시트 다운로드

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2SK1300
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S

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2SK1300
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
100
±20
10
40
10
40
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK1300
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 100
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
1.0
Forward transfer admittance |yfs|
4.5
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note: 1. Pulse test
Typ Max Unit
——V
——V
±10 µA
— 250 µA
— 2.0 V
0.20 0.25
0.25 0.35
7.0 —
S
525 —
pF
205 —
pF
60 — pF
5 — ns
50 — ns
170 —
ns
75 — ns
1.2 —
V
220 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 80 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VGS = 4 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 50 A/µs
3

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2SK1300
Power vs. Temperature Derating
60
40
20
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
20
10 V
Pulse Test
6V
16
4V
12
3.5 V
8
3V
4 VGS = 2.5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
Ta = 25°C
30 10 µs
10
3
1
PW
=
1
10
ms
ms
(1
Shot)
0.3 Operation in this area
0.1 is limited by RDS (on)
1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
2 TC = 75°C
25°C
–25°C
0 1 2 34 5
Gate to Source Voltage VGS (V)
4

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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
Pulse Test
2.0 10 A
1.5
5A
1.0
0.5 ID = 2 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
ID = 10 A
5A
0.4 2 A
10 A
5A
0.3 VGS = 4 V
2A
0.2
10 V
0.1
0
–40 0 40 80 120 160
Case Temperature TC (°C)
2SK1300
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
VGS = 4 V
0.2
10 V
0.1
0.05
0.5
12
5 10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
20 Pulse Test
10 TC = –25°C
5
25°C
75°C
2
1
0.5
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10
5