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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID = 3.0 A)
2SK2358: RDS(on) = 1.0 (VGS = 10 V, ID = 3.0 A)
Low Ciss Ciss = 1050 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±6.0
A
Drain Current (pulse)*
ID(pulse) ±24
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 35 W
Total Power Dissipation (Ta = 25 ˚C)
PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS 6.0 A
Single Avalanche Energy**
EAS 17 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
1 23
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994

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2SK2357/2SK2358
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
RDS(on)
MIN.
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS(off)
| yfs |
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
2.5
3.0
TYP.
0.7
0.8
1050
200
26
14
9
56
14
27
5.5
12
1.0
300
1.5
MAX.
0.9
1.0
3.5
100
±100
UNIT
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V 2SK2357
ID = 3.0 A 2SK2358
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3.0 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 3.0 A
VGS(on) = 10 V
VDD = 150 V
RG = 10 RL = 50
ID = 6.0 A
VDD = 400 V
VGS = 10 V
IF = 6.0 A, VGS = 0
IF = 6.0 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
PG
VGS = 20 - 0 V
D.U.T.
RG = 25
50
D.U.T.
L
RG
VDD PG. RG = 10
ID
VDD
IAS
BVDSS
VDS
Starting Tch
VGS
0
t
t = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
Wave
Form
VGS
10 %
0
90 %
VGS (on)
ID 90 %
ID
Wave
Form
10 %
0
td (on)
ID
t tr d (off)
90 %
10 %
tf
ton toff
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2

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TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
1.0
Tc
R(DaSt(oVn)GLS i=m1ite0dV)
ID (DC)
Power
= 25 °C
ID (pulse) PW
=
100
Dissipa1t0io0nm1L0ismmites1dms
s
10
s
0.1 Single Pulse
0.1 10 100 1000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50 Pulsed
10
1
0.1
0.05
0
Ta = –25 °C
25 °C
75 °C
125 °C
5 10 15
VGS - Gate to Source Voltage - V
2SK2357/2SK2358
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10 VGS = 20 V
10 V
8V
8 6V
Pulsed
6
4
2
0 4 8 12 16
VDS - Drain to Source Voltage - V
3

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2SK2357/2SK2358
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-a) = 62.5 °C/W
10
Rth(ch-c) = 3.57 °C/W
1
0.1
0.01
10 µ
100 µ
1m
10 m 100 m
1
PW - Pulse Width - s
10
TC = 25 °C
Single Pulse
100 1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Ta = –25 °C
25 °C
75 °C
10 125 °C
VDS = 10 V
Pulsed
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
Pulsed
1.0
ID = 6 A
ID = 3 A
0.5
0.1
3.0
1.0 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE
RESITANCE vs. DRAIN CURRENT
Pulsed
2.0
1.0
0
1.0 10 100
ID - Drain Current - A
0 10 20 30
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
4.0 VDS = 10 V
ID = 1 mA
3.0
2.0
1.0
0
–50
0 50 100 150
Tch - Channel Temperature - °C
4

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2SK2357/2SK2358
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
1.2 ID = 6 A
3A
0.8
0.4
VGS = 10 V
0
–50 0 50 100 150
Tch - Channel Temperature - °C
5 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1.0 MHz
Ciss
100
10
5
1
800
600
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µs
VGS = 10 V
400
200
0
1.0
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
Pulsed
10
1.0
10 V
VGS = 0
0.1
0.05
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
0.5
0.1
VDD = 150 V
VGS = 10 V
RG = 25
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 6 A
VDD = 400 V VGS
14
300
250 V
12
125 V
10
200 8
6
100
VDS
4
2
0
0 10 20 30 40
Qg - Gate Charge - nC
5