2SK2684L.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 2SK2684L 데이타시트 다운로드

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2SK2684(L), 2SK2684(S)
Silicon N Channel DV–L MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 20 mtyp. (VGS = 10V, ID = 15 A)
4V gate drive devices.
High speed switching
Outline
LDPAK
4
4
D1
2
3
G
1
2
3 1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-542
1st. Edition

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2SK2684(L), 2SK2684(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
30
±20
30
120
30
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2

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2SK2684(L), 2SK2684(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown V(BR)DSS
30
V
voltage
ID = 10mA, VGS = 0
Gate to source breakdown V(BR)GSS ±20 — — V
voltage
IG = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
— — 10 µA VDS = 30 V, VGS = 0
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
±10 µA
VGS = ±16V, VDS = 0
1.0 —
2.0 V
ID = 1mA, VDS = 10V
— 20 28 mID = 15A, VGS = 10V*1
— 35 50 mID = 15A, VGS = 4V*1
12 18 — S
ID = 15A, VDS = 10V*1
— 750 — pF VDS = 10V
— 520 — pF VGS = 0
— 210 — pF f = 1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
— 16 — ns VGS = 10V, ID = 15A
— 260 — ns RL = 0.67
— 85 — ns
— 90 — ns
— 1.0 — V
IF = 30A, VGS = 0
Body to drain diode reverse trr
recovery time
— 45 — ns IF = 30A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
3

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2SK2684(L), 2SK2684(S)
Main Characteristics
Power vs. Temperature Derating
100
75
50
25
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
200 10 µs
100
50
20
1
100
ms
µs
10
5
Operation in
2 this area is
1 limited by R DS(on)
0.5 Ta = 25 °C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
10 V
Pulse Test
6V
40 5 V 4.5 V
30 4 V
20 3.5 V
10 VGS = 3 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
25°C
40
–25°C
Tc = 75°C
30
20
10
V DS = 10 V
Pulse Test
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
4

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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I D = 20 A
0.4
10 A
0.2
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK2684(L), 2SK2684(S)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50 VGS = 4 V
20
10 V
10
5
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
V GS = 4 V
I D = 20 A
40 5, 10 A
20 5, 10, 20 A
10 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30 Tc = –25 °C
10 25 °C
75 °C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5