4030B.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 4030B 데이타시트 다운로드

No Preview Available !

MIC94030/94031
MIC94030/94031
TinyFET™ P-Channel MOSFET
Preliminary Information
Micrel
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a very
small package.
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
The 4-terminal SOT-143 package permits a substrate con-
nection separate from the source connection. This 4-terminal
configuration improves the θJA (improved heat dissipation)
and makes analog switch applications practical.
The small size, low threshold, and low RDS(on) make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode or
distributed power management applications.
Features
• 13.5V minimum drain-to-source breakdown
• 0.75typical on-resistance
at 4.5V gate-to-source voltage
• 0.45typical on-resistance
at 10V gate-to-source voltage
• Operates with 2.7V gate-to-source voltage
• Separate substrate connection for added control
• Industry’s smallest surface mount package
Applications
• Distributed power management
• PCMCIA card power management
• Battery-powered computers, peripherals
• Hand-held bar-code scanners
• Portable communications equipment
Ordering Information
Part Number
Temperature Range*
MIC94030BM4
–55°C to +150°C
MIC94031BM4
–55°C to +150°C
* Operating Junction Temperature
Package
SOT-143
SOT-143
Pin Configuration
Typical PCB Layout
Drain Substrate
Part
Identification
P3x
Part Number
MIC94030BM4
MIC94031BM4
Identification
P30
P31
D
PCB heat sink
plane improves
heat dissipation
SS
Gate Source
SOT-143 Package (M4)
GS
PCB traces
6
Schematic Symbol
Gate
Source
Substrate
Drain
Schematic Symbol
Patents 5,355,008; 5,589,702
1997
Functional Diagrams
S
S
~500k
G SS G
SS
Internal
gate-to-source
D
pull-up resistor
D
MIC94030
MIC94031
6-41

No Preview Available !

MIC94030/94031
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse) .................................... 16V
Gate-to-Source Voltage (pulse) .................................... 16V
Continuous Drain Current
TA = 25°C .................................................................... 1A
TA = 100°C ............................................................... 0.5A
Operating Junction Temperature ............... –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
Micrel
Total Power Dissipation
TA = 25°C ............................................................ 568mW
TA = 100°C .......................................................... 227mW
Thermal Resistance
θJA ...................................................................................... 220°C/W
θJC ..................................................................................... 130°C/W
Lead Temperature
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics Voltage and current values are negative. Signs not shown for clarity.
Symbol Parameter
Condition (Note 1)
VBDSS
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
VGS Gate Threshold Voltage
VDS = VGS, ID = 250µA
IGSS
Gate-Body Leakage
VDS = 0V, VGS = 12V, Note 2, Note 3
RGS Gate-Source Resistor
VDS = 0V, VGS = 12V, Note 2, Note 4
CISS
Input Capacitance
VGS = 0V, VDS = 12V
IDSS
Zero Gate Voltage Drain Current VDS = 12V, VGS = 0V
VDS = 12V, VGS = 0V, TJ = 125°C
ID(ON)
On-State Drain Current
VDS = 10V, VGS = 10V, Note 5
RDS(ON)
Drain-Source On-State Resist.
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
gFS
Forward Transconductance
VDS = 10V, ID = 200mA, Note 5
Note 1
Note 2
Note 3
Note 4
Note 5
TA = 25°C unless noted. Substrate connected to source for all conditions
ESD gate protection diode conducts during positive gate-to-source voltage excursions.
MIC94030 only
MIC94031 only
Pulse Test: Pulse Width 80µsec, Duty Cycle 0.5%
Min Typ
13.5
0.6 1.0
500 750
100
0.010
6.3
0.45
0.75
1.20
480
Max
1.4
1
1000
25
250
1.00
Units
V
V
µA
k
pF
µA
µA
A
mS
6-42
1997

No Preview Available !

MIC94030/94031
Typical Characteristics
On Resistance vs.
Drain Current at 25°C
1.50
80µs Pulse Test
1.25
1.00
0.75
VG = 4.5V
0.50
0.25
VG = 10V
0.00
0.0
0.5 1.0 1.5
ID (A)
2.0
On Resistance vs.
Drain Current at 125°C
1.50
80µs Pulse Test
1.25
1.00
0.75
VG = 4.5V
0.50
0.25
VG = 10V
0.00
0.0
0.5 1.0 1.5
ID (A)
2.0
Micrel
Drain Characteristics
160
2.0V
140
VGS
1.8V
120
100
80 1.6V
60
40
1.4V
20
1.2V
0
0.0 0.5 1.0 1.5 2.0
DRAIN-TO-SOURCE VOLTAGE (V)
Drain Characteristics
3.5
5.0V
3.0
4.5V
VGS
2.5 4.0V
2.0 3.5V
1.5 2.5V
2.0V
1.0
1.5V
0.5 1.0V
0.0
0 2 4 6 8 10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
300µs Pulse Test
Drain Characteristics
6
10V
5 9V
8V
4
6V
5V
VGS
3
4V
2
3V
1 2V
1V
0
0 2 4 6 8 10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
80µs Pulse Test
6
1997
6-43