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SCHOTTKY RECTIFIER
Bulletin PD-20694 rev. B 07/03
40CTQ150
40CTQ150S
40CTQ150-1
40 Amp
Major Ratings and Characteristics
Characteristics
40CTQ... Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
VF @ 20 Apk, TJ=125°C
(per leg)
TJ
40
150
1500
0.71
- 55 to 175
A
V
A
V
°C
Description/ Features
The 40CTQ... center tap Schottky rectifier has been opti-
mized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175° C junction temperature. Typical
applications are in switching power supplies, converters,
free-wheeling diodes, and reverse battery protection.
175° C TJ operation
Center tap TO-220 package
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
40CTQ150
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
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Case Styles
40CTQ150S
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
D2PAK
40CTQ150-1
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-262
1

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40CTQ150, 40CTQ150S, 40CTQ150-1
Bulletin PD-20694 rev. B 07/03
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Value
150
Absolute Maximum Ratings
Parameters
40CTQ.. Units
Conditions
IF(AV) Max. Average Forward (Per Leg)
Current * See Fig. 5 (Per Device)
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current (Per Leg) * See Fig. 7
EAS Non-Repetitive Avalanche Energy
(Per Leg)
IAR Repetitive Avalanche Current
(Per Leg)
20
40
1500
250
1.0
1.5
A 50% duty cycle @ TC = 140 °C, rectangular wave form
5µs Sine or 3µs Rect. pulse Following any rated
A load condition and with
10msSineor6msRect.pulse rated VRRM applied
mJ TJ = 25 °C, IAS = 1.5 Amps, L = 0.9 mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
40CTQ.. Units
Conditions
VFM Max. Forward Voltage Drop
(Per Leg) * See Fig. 1 (1)
IRM Max. Reverse Leakage Current
(Per Leg) * See Fig. 2 (1)
CT Max. Junction Capacitance (Per Leg)
LS Typical Series Inductance (Per Leg)
dv/dt Max. Voltage Rate of Change
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
0.93
1.16
0.71
0.85
50
15
450
8.0
10000
V @ 20A
V @ 40A
V @ 20A
V @ 40A
TJ = 25 °C
TJ = 125 °C
µA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs
Thermal-Mechanical Specifications
Parameters
40CTQ.. Units
Conditions
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance
Per Leg
Junction to Case
RthJC Max. Thermal Resistance Per Package
Junction to Case
RthCS Typical Thermal Resistance,
Case to Heatsink
wt Approximate Weight
T Mounting Torque
Min.
Max.
-55 to 175
-55 to 175
1.5
0.75
0.5
2 (0.07)
6 (5)
12 (10)
°C
°C
°C/W DC operation
* See Fig. 4
°C/W DC operation
°C/W Mounting surface , smooth and greased
g (oz.)
Kg-cm Non-lubricated threads
(Ibf-in)
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40CTQ150, 40CTQ150S, 40CTQ150-1
Bulletin PD-20694 rev. B 07/03
100 1000
100 Tj = 175˚C
150˚C
10 125˚C
100˚C
1 75˚C
0.1 50˚C
25˚C
0.01
Tj = 175˚C
0.001
0 20 40 60 80 100 120 140 160
10
Tj = 125˚C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Tj = 25˚C
Vs. Reverse Voltage
1000
TJ = 25˚C
100
1
0 0.4 0.8 1.2 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
10
0 40 80 120 160
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
D = 0.75
1 D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
Single Pulse
(Thermal Resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdmx ZthJC + Tc
0.01
0.00001 0.0001 0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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100
3