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June 2004
FDD6688/FDU6688
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
DC/DC converter
Motor Drives
Features
84 A, 30 V.
RDS(ON) = 5 m@ VGS = 10 V
RDS(ON) = 6 m@ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely
low RDS(ON)
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbo
l
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Ratings
30
±20
84
100
83
3.8
1.6
–55 to +175
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6688
FDD6688
D-PAK (TO-252)
13’’
FDU6688
FDU6688
I-PAK (TO-251)
Tube
Tape width
12mm
N/A
Units
V
A
W
°C
°C/W
Quantity
2500 units
75
©2004 Fairchild Semiconductor Corporation
FDD6688/FDU6688 Rev F(W)

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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = ±20 V,
VGS = 0 V
VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 18 A
VGS = 4.5 V, ID = 16.5 A
VGS = 10 V, ID = 18 A, TJ=125°C
VGS = 10 V,
VDS = 5 V
VDS = 5 V,
ID = 18 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 15V,
VGS = 5 V
ID = 18 A,
Min Typ Max Units
370 mJ
21 A
30 V
24 mV/°C
1
±100
µA
nA
1 1.8 3
V
–5 mV/°C
45
56
6 10
50
88
m
A
S
3845
930
368
1.2
pF
pF
pF
15 27
13 23
62 99
36 58
37 56
10
14
ns
ns
ns
ns
nC
nC
nC
FDD6688/FDU6688 Rev F(W)

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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A (Note 2)
Voltage
trr Diode Reverse Recovery Time IF = 18 A ,diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
0.7 1.2
39
31
V
nS
nC
Notes:8
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6688/FDU6688 Rev F(W)

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Typical Characteristics
100
VGS = 10V
4.5V
80
60
4.0V
3.5V
40
3.0V
20
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
ID =18A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = 5V
60
40
20
0
1.5
TA = 125oC
25oC
-55oC
2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics
1.8
VGS = 3.5V
1.6
1.4
4.0V
1.2
4.5V
5.0V
6.0V
1 10V
0.8
0
20 40 60 80
ID, DRAIN CURRENT (A)
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
0.01
ID = 9 A
0.008
0.006
0.004
TA = 25oC
TA = 125oC
0.002
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
VGS = 0V
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6688/FDU6688 Rev F(W)

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Typical Characteristics
10
ID =18A
8
VDS = 10V
15V
20V
6
4
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 96oC/W
TC = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area
5000
4000
3000
CISS
f = 1MHz
VGS = 0 V
2000
1000
CRSS
0
0
COSS
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TC = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJAt) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6688/FDU6688 Rev F(W)