F05B23VR.pdf 데이터시트 (총 12 페이지) - 파일 다운로드 F05B23VR 데이타시트 다운로드

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SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
F05B23VR
OUTLINE DIMENSIONS
Case : B-pack
(Unit : mm)
230V 0.5A
FEATURES
Applicable to 4V drive.
The static Rds(on) is small.
Built-in ZD for Gate Protection.
APPLICATION
DC/DC converters
Power supplies of DC 12-24V input
Product related to
Integrated Service Digital Network
RATINGS
Absolute Maximum Ratings Tc = 25℃)
Item Symbol
Conditions
Storage Temperature
Tstg
Channel Temperature
Tch
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain CurrentDC
ID
Continuous Drain CurrentPeak)
IDP
Continuous Source CurrentDC
IS
PT On alumina substrate, 50.8mm, substrate thickness 0.64t, Ta = 25
Total Power Dissipation
Ratings
-55~150
150
230
±20
0.5
1
0.5
1.5
Unit
V
A
W
3.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

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VR Series Power MOSFET
F05B23VR
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 230V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±20V, VDS = 0V
Forward Tranconductance
gfs ID = 0.5A, VDS = 10V
Static Drain-Source On-tate Resistance RDS(ON) ID = 0.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 0.2mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 0.5A, VGS = 0V
Thermal Resistance
θja junction to ambient, on alumina substrate
θjc junction to case
Total Gate Charge
Qg VGS = 10V, ID = 0.5A, VDD = 200V
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 0.5A, VGS = 10V, RL = 200Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
230 V
250 μA
±0.1
0.2 0.4
S
5.5 8 Ω
234 V
1.5
83.3 /
35.7
2.7 nC
45
4.5 pF
30
30 60 ns
50 100
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

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F05B23VR Transfer Characteristics
1
Ta = 55°C 25°C
0.8 100°C
150°C
0.6
0.4
0.2
0
0
VDS = 10V
pulse test
TYP
2 4 6 8 10
Gate-Source Voltage VGS [V]