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polyfet rf devices
F1001
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
20 Watts Single Ended
MRI, Laser Driver and others.
"Polyfet" TM process features
Package Style AA
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.13 oC/W
200 oC
-65 oC to 150oC
2A
70 V 70V 30V
RF CHARACTERISTICS ( 20WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
16
dB Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
η Drain Efficiency
60 % Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltage
65
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Current
1 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
1
Ohm
Vgs = 20V, Ids = 4 A
Idsat
Saturation Current
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
4
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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POUT VS PIN GRAPH
F1001
CAPACITANCE VS VOLTAGE
35
30
25
20
15
10
5
0
0
F1001 POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V
Efficiency = 75%
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
PIN IN WATTS
POUT
GAIN
20
19
18
17
16
15
14
13
12
11
10
2
IV CURVE
F1B 1 DIE Capacitance vs Vds
100
Coss
Ciss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
6
5
4
3
2
1
0
02
Vg = 2V
F1B 1DIE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1B 1 DIE GM & ID vs VG
10
Id
1
Gm
0.1
0.01
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com