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polyfet rf devices
F1006
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
120 Watts Single Ended
Package Style AV
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
250 Watts
0.7 oC/W
200 oC
-65 oC to 150oC
12 A
70 V
70 V 30V
RF CHARACTERISTICS ( 120WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.3 A, Vgs = 0V
Idss Zero Bias Drain Curren
6 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.6 A, Vgs = Vds
gM Forward Transconductanc
4.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.18
Ohm
Vgs = 20V, Ids = 24 A
Idsat
Saturation Curren
33
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
198 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
24
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

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POUT VS PIN GRAPH
F1006
CAPACITANCE VS VOLTAGE
200
180
160
140
120
100
80
60
40
20
0
0
F1006 PIN VS POUT Idq=0.6A F=175 Mhz Vds=28v
POUT
GAIN
Efficiency = 70 %
5 10 15 20 25
PIN IN WATTS
POUT
GAIN
IV CURVE
18
16
14
12
10
8
6
30
F1B 6 DICE CAPACITANCE
1000
100
10
0
Ciss
Coss
Crss
5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
40
35
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 6 DICE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1B 6 DIE GM & ID vs VG
100
Id
10
1 Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com