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polyfet rf devices
F1240
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet"TM process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
40 Watts Single Ended
Package Style AT
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
120 Watts
1.5 oC/W
200 oC
-65oC to 150oC
6A
50 V
50V 30V
RF CHARACTERISTICS ( 40WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Pow er Gain
10
dB Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdow n Voltage
40
V Ids = 0.15 A, Vgs = 0V
Idss Zero Bias Drain Current
3 mA Vds = 12.5V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.3 A, Vgs = Vds
gM Forw ard Transconductance
2.4 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.35
Ohm
Vgs = 20V, Ids = 24A
Idsat
Saturation Current
22.5
Amp
Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
120 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
18
pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
90 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com

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F1240
POUT VS PIN GRAPH
F1240 POUT VS PIN F=175 MHZ; IDQ=1.2A;
VDS=12.5V
45
40
35
30
25
20
15
10
0
Efficiency = 65%
123
P IN IN WATT S
4
5
POUT
23.00
21.00
19.00
17.00
15.00
13.00
11.00
9.00
6
GAI N
IV CURVE
CAPACITANCE VS VOLTAGE
F1C 3DI E CAPACITANCE
1000
100
Coss
Ciss
10
0
Crss
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
30
25
20
15
10
5
0
0
2
Vg = 2V
F1C 3 D IE I V CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1C 3 DIE GM & ID vs VGS
100
Id
10
Gm
1
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com