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ESJA19
HIGH VOLTAGE DIODE
ESJA19 is high reliability resin molded type high voltage
diode in small size package which is sealed (a multilayed
mesa type silicon chip) by epoxy resin.
(10kV,12kv/5mA)
Outline Drawings
Lot No.
Cathode Mark
o 2.5
o 0.5
Features
Ultra high speed switching
Low VF
High surge resisitivity for CRT discharge
High reliability design
Ultra small pakage
Applications
Rectification for CRT display monitor high voltage
power supply (FBT: Flyback Transformer)
27 min.
10 27 min.
Cathode Mark
Type
Mark
ESJA19-10
Maximum Ratings and Characteristics
Absolute Maximum Ratings
ESJA19-12
Items
Symbols
Condition
ESJA19
-10 -12
Repetitive Peak Reverse Voltage
VRRM
10 12
Average Output Current
IO
Surge Current
IFSM
Junction Temperature
Tj
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Ta=25°C,Resistive Load
10mS Sine-half wave
peak value
5
0.5
120
100
-40 to +120
Units
kV
mA
A
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
ESJA19
-10 -12
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
VF IF=10mA
36 42
IR VR=VRRM
2
trr Ta=25°C,IF=2mA,IR=4mA
0.045
Junction Capacitance
Cj Ta=25°C,VR=0V,f=1MHz
1
Units
V
µA
µs
pF

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Characteristics
ESJA19(10kV,12kv/5mA)
30
20
IF
[mA]
10
Tj= 25°C
Tj=100°C
ESJA19-10
ESJA19-12
0.1
IR
[µA]
0.01
0
0 20 40 60
V [V]
F
Forward Characteristics
80
1E-3
0
ESJA19-10
ESJA19-12
Tj=100°C
ESJA19-10
ESJA19-12
Tj= 25°C
4 8 12
V R [kV]
Reverse Characteristics
16
1.0
0.8
Cj 0.6
[pF]
0.4
0.2
Tj=25°C
f=1MHz
ESJA19-10
ESJA19-12
100
80
N 60
[pcs.] 40 ESJA19-10
20
Tj= 25°C
IR=100 µA
N=100pcs.
ESJA19-12
0.0
0
40 80 120 160 200
V [V]
Bias
Junction Capacitance Characteristics
0
8 12 16 20 24 28
V AV [kV]
Avalanche Breakdown Voltage
ESJA19-10
100
50
Tj= 25°C
N=100pcs.
N0
100
[pcs.]
50
ESJA19-12
0
0.00
0.02
0.04
0.06
0.08
trr ( µ s)
Reverse Recovery Time
0.10
0.01µF D.U.T
1kohm
150
kohm
100ohm
OSCILLO SCOPE
IF=2mA
0
IR=4mA
1mA
trr