ESM3045DV.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 ESM3045DV 데이타시트 다운로드

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ESM3045DV
NPN DARLINGTON POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ULTRAFAST FREEWHEELING DIODE
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s SMPS & UPS
s DC/DC & DC/AC CONVERTERS
s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Par am e te r
VCEV Collector-Emitter Voltage (VBE = -5 V)
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current (tp = 10 ms)
IB Base Current
IBM Base Peak Current (tp = 10 ms)
Ptot Tot al Dissipation at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Ope rating Junction Temperature
VISO Insulation Withstand Voltage (AC-RMS)
September 1997
Value
600
450
7
24
36
2.5
5
125
-55 to 150
150
2500
Unit
V
V
V
A
A
A
A
W
oC
oC
oC
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ESM3045DV
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Thermal Resistance Junction-case (diode)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
Max
1
2
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER #
ICEV #
Collecto r Cut-of f
Current (RBE = 5 )
Collecto r Cut-of f
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 oC
Tj = 100 oC
IEBO # Emitter Cut-off Current VEB = 5 V
(IC = 0)
VCEO(SUS) * Collecto r-Emitter
Sustaining Voltage
IC = 0.2 A L = 25 mH
Vclamp = 450 V
hFEDC Current Gain
IC = 20 A VCE = 5 V
VCE(sat)Collecto r-Emitter
Saturation Voltage
IC = 15 A
IC = 15 A
IC = 20 A
IC = 20 A
IB = 0 .3 A
IB = 0 .3 A
IB = 1 .2 A
IB = 1 .2 A
Tj = 100 oC
Tj = 100 oC
VBE( sat)Base-Emitter
Saturation Voltage
IC = 20 A IB = 1 .2 A
IC = 20 A IB = 1 .2 A Tj = 100 oC
diC/dt Rate of Rise of
On-state Collector
VCC = 3 00 V RC = 0 tp = 3 µs
IB1 = 0.45 A Tj = 100 oC
VCE(3 µs)•• Colle cto r-Emitter
Dynamic Voltage
VCC = 300 V RC = 20
IB1 = 0.45 A Tj = 100 oC
VCE(5 µs)•• Collector-Emitte r
Dynamic Voltage
VCC = 300 V RC = 20
IB1 = 0.45 A Tj = 100 oC
ts
tf
tc
VCEW
VF
Storage Time
Fall Time
Cross-over Time
Maximum Collector
Emitter Voltage
With ou t Snubber
Diode Forward Voltage
IC = 15 A VCC = 50 V
VBB = -5 V RBB = 0.6
Vclamp = 450 V IB1 = 0.3 A
L = 0. 17 mH Tj = 100 oC
ICWoff = 24 A IB1 = 1.2 A
VBB = -5 V VCC = 5 0 V
L = 0. 1 mH RBB = 0.6
Tj = 1 25 oC
IF = 20 A Tj = 1 00 oC
IRM Reverse Recovery
VCC = 2 00 V IF = 2 0 A
Current
diF/dt = -125 A/µs L < 0.05 µH
Tj = 1 00 oC
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 1.47 + 0.0026 IF P = 1.47 IF(AV) + 0.0026 I2F(RMS)
Min. Typ.
450
120
1.2
1.3
1.4
1.6
2.1
2.1
125 160
4.5
2.5
2.1
0.15
0.5
450
1.7
11
Max.
1. 5
17
1
12
1
2
2
3
8
4. 5
4
0. 4
1. 2
2
14
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
V
A
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Safe Operating Areas
Thermal Impedance
ESM3045DV
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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ESM3045DV
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
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Dc Current Gain
Typical VF Versus IF
ESM3045DV
Peak Reverse Current Versus diF/dt
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
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