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Transistors
General purpose transistor
(dual transistors)
EMZ7 / UMZ7N
EMZ7 / UMZ7N
!Features
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low VCE(sat)
!Structure
NPN / PNP epitaxial planar silicon transistor
! External dimensions (Units : mm)
EMZ7
UMZ7N
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : Z7
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z7
! Equivalent Circuit
EMZ7 / UMZ7N
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
! Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
1 120mW per element must not be exceeded.
Limits
Tr1 Tr2
15 15
12 12
6 6
500 500
150(TOTAL)
150
55∼+150
Unit
V
V
V
mA
mW 1
°C
°C

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Transistors
EMZ7 / UMZ7N
! Electrical characteristics (Ta = 25°C)
Tr1 (NPN)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
270
Typ.
90
320
7.5
Max.
0.1
0.1
250
680
Unit
V
V
V
µA
µA
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
IC/IB=200mA/10mA
VCE/IC=2V/10mA
VCE=2V, IC=10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Tr2 (PNP)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
270
Typ.
100
260
6.5
Max.
0.1
0.1
250
680
Unit
V
V
V
µA
µA
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
IC/IB=200mA/10mA
VCE/IC=2V/10mA
VCE=2V, IC=10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
!Packaging specifications
Packaging type
Code
Part No. Basic ordering unit (pieces)
UMZ7N
EMZ7
Taping
TR T2R
3000
8000
!Electrical characteristic curves
Tr1 (NPN)
1000
500
VCE=2V
200
100
50
20
10
5
2
1
0 0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation
characteristics
1000
500
200
100
50
Ta=125°C
25°C
40°C
VCE=2V
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.2 DC current gain vs.
collector current
1000
500
IC/IB=20
200
100
50 Ta=125°C
25°C
20 40°C
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )

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Transistors
EMZ7 / UMZ7N
1000
Ta=25°C
500
200
100
50
20 IC/IB=50
10 20
5 10
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
10000
5000
2000
1000
500
Ta=−40°C
25°C
125°C
IC/IB=20
200
100
50
20
10
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
1000
500 VCE=2V
Ta=25˚C
200 Pulsed
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 5001000
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
1000
500
200
100
50
20
10
5
IE=0A
f=1MHz
Ta=25°C
Cib
Cob
2
1
0.1 0.2 0.5 1
2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Tr2 (PNP)
1000
500
VCE=2V
200
100
50
20
10
5
2
1
0 0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Grounded emitter propagation
characteristics
1000
500
200
100
50
20
10
5
Ta=125°C
Ta=25°C
Ta= 40°C
VCE=2V
1000
500
200
100
50
20
10
5
IC/IB=20
Ta=125°C
Ta=25°C
Ta= 40°C
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.9 DC current gain vs.
collector current
Fig.10 Collector-emitter saturation voltage
vs. collector current ( Ι )

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Transistors
EMZ7 / UMZ7N
1000
500
Ta=25°C
200
100
50 IC / IB=50
20 IC / IB=20
10 IC / IB=10
5
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.11 Collector-emitter saturation voltage
vs. collector current
10000
5000
IC/IB=20
2000
1000
500
200
100
50
Ta=25°C Ta= −40°C
Ta=125°C
20
10
12
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.12 Base-emitter saturation voltage
vs. collector current
1000
500
VCE=2V
Ta=25°C
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : IC (mA)
Fig.13 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
20
10
5
IE=0A
f=1MHz
Ta=25°C
Cib
Cob
2
1
0.1 0.2 0.5 1
2
5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.14
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage