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FQAF65N06
60V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 49A, 60V, RDS(on) = 0.016@VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3PF
FQAF Series
D
!
"
!"
G!
"
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!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQAF65N06
60
49
34.9
196
± 25
660
49
8.6
7.0
86
0.57
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ Max
-- 1.75
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.07 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID =24.5 A
VDS = 25 V, ID = 24.5 A (Note 4)
2.0 --
4.0
-- 0.012 0.016
-- 43
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850 2410
-- 700 910
-- 100 130
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 32.5 A,
RG = 25
-- 20
50
-- 160 330
-- 90 190
(Note 4, 5) -- 105 220
VDS = 48 V, ID = 65 A,
VGS = 10 V
(Note 4, 5)
-- 48
-- 12
-- 19.5
65
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 49
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 196
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 49 A
-- -- 1.5
trr Reverse Recovery Time
VGS = 0 V, IS = 65 A,
-- 62
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 110
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 320µH, IAS = 49A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 65A, di/dt 300As, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
102
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On-Region Characteristics
30
25
V = 10V
GS
20
V = 20V
GS
15
10
5
Note : TJ = 25
0
0 50 100 150 200 250 300
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
Notes :
1. VGS = 0 V
2. f =1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
100
2
-55
Notes :
1. V = 25V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 V = 30V
DS
V = 48V
DS
8
6
4
2
Note : ID = 65A
0
0 10 20 30 40 50
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. V =0V
2.
GS
ID =
250
μ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature[oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by RDS(on)
102
101
100
10-1
100 µs
1 ms
10 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100 101
V , Drain-Source Voltage [V]
DS
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5 Notes :
1. V = 10 V
GS
2. I = 32.5 A
D
0.0
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
50
40
30
20
10
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0 D =0 .5
0 .2
1 0 -1
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
Notes :
1. Zθ
(t)
JC
=
1.75
/W
Max.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T =
C
P*
DM
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001