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FQP4P40
400V P-Channel MOSFET
August 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Features
• -3.5A, -400V, RDS(on) = 3.1@VGS = -10 V
• Low gate charge ( typical 18 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
▶▲
!
D
FQP4P40
-400
-3.5
-2.2
-14
± 30
260
-3.5
8.5
-4.5
85
0.68
-55 to +150
300
Typ Max
-- 1.47
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000

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Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
-400
ID = -250 µA, Referenced to 25°C --
VDS = -400 V, VGS = 0 V
VDS = -320 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
--
--
--
--
--
0.36
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.75 A
-- 2.44
VDS = -50 V, ID = -1.75 A (Note 4)
--
2.7
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 520
-- 80
-- 11
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -200 V, ID = -3.5 A,
RG = 25
(Note 4, 5)
VDS = -320 V, ID = -3.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
13
55
35
37
18
3.8
9.4
--
--
-1
-10
-100
100
-5.0
3.1
--
680
105
15
35
120
80
85
23
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -3.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 37mH, IAS = -3.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -3.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- -3.5
-- -14
-- -5.0
260 --
1.4 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, August 2000

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Typical Characteristics
101
V
GS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
100 Bottom : -5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = - 10V
GS
V = - 20V
GS
4
2
Note : TJ = 25
0
0 3 6 9 12
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
C
iss
600
Coss
400 Notes :
1. VGS = 0 V
C 2. f = 1 MHz
rss
200
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
Notes :
1. VDS = -50V
2. 250μs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 V = -80V
DS
V = -200V
DS
8 V = -320V
DS
6
4
2
Note : ID = -3.5 A
0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000