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FQP5N20L
200V LOGIC N-Channel MOSFET
August 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 4.5A, 200V, RDS(on) = 1.2@VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
G DS
TO-220
IRF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP5N20L
200
4.5
2.8
18
± 20
60
4.5
5.2
5.5
52
0.42
-55 to +150
300
Typ Max
-- 2.4
0.5 --
-- 62.5
©2001 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A1, August 2001

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.18
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
VGS = 10 V, ID = 2.25 A
VGS = 5 V, ID = 2.25 A
--
0.94
0.98
VDS = 30 V, ID = 2.25 A (Note 4) --
3.6
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 250
-- 40
-- 6
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 4.5 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 4.5 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
9
90
15
50
4.8
1.2
2.4
--
--
1
10
100
-100
2.0
1.2
1.25
--
325
50
8
25
190
40
110
6.2
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 4.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 18
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
95
0.3
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.44mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001

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Typical Characteristics
101 Top :
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
8
6
V = 5V
GS
V = 10V
4 GS
2
Note : T = 25
J
0
0 2 4 6 8 10
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300 C
iss
200
100
0
10-1
C Notes :
oss 1. VGS = 0 V
2. f = 1 MHz
C
rss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150
100
25
10-1
0
-55
Notes :
1. VDS = 30V
2. 250μ s Pulse Test
2468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
8 V = 100V
DS
V = 160V
DS
6
4
2
Note : ID = 4.5 A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, August 2001