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FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Features
• 9.5A, 200V, RDS(on) = 0.36@VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP10N20C FQPF10N20C
200
9.5 9.5 *
6.0 6.0 *
38 38 *
± 30
210
9.5
7.2
5.5
72 38
0.57 0.3
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N20C
1.74
0.5
62.5
FQPF10N20C
3.33
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.28
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.75 A
VDS = 40 V, ID = 4.75 A
(Note 4)
2.0
--
--
--
0.29
5.5
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 395
-- 97
-- 40.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 9.5 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 9.5 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
11
92
70
72
20
3.1
10.5
--
--
10
100
100
-100
4.0
0.36
--
510
125
53
30
190
150
160
26
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = 9.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.5mH, IAS = 9.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
158
0.97
9.5
38
1.5
--
--
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003

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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101 7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.0 VGS = 10V
VGS = 20V
0.5
Note : TJ = 25
0.0
0 5 10 15 20 25 30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800 Ciss
Coss
600
400 Crss
200 Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
V = 100V
DS
V = 160V
8 DS
6
4
2
Note : ID = 9.5A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2003