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FQPF5N80
800V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 2.8A, 800V, RDS(on) = 2.6@VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220F
FQPF Series
D
!
"
35
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQPF5N80
800
2.8
1.77
11.2
± 30
590
2.8
4.7
4.0
47
0.38
-55 to +150
300
Typ Max
-- 2.66
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
800
--
--
--
--
--
--
0.9
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.4 A
VDS = 50 V, ID = 1.4 A (Note 4)
3.0
--
--
--
2.0
3.7
5.0
2.6
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 950 1250 pF
-- 95 125 pF
-- 11 15 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 400 V, ID = 4.8 A,
RG = 25
(Note 4, 5)
VDS = 640 V, ID = 4.8 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
22 55
60 130
55 120
40 90
25 33
5.6 --
12 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.8 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 140mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 2.8
-- 11.2
-- 1.4
610 --
4.7 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, September 2000

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Typical Characteristics
101
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100 6.0 V
Bottom : 5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
5
4 VGS = 10V
V = 20V
GS
3
2
Note : T = 25
J
1
0 3 6 9 12 15
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1600
1400
1200
1000
800
600
400
200
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
C
oss
C
rss
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μs Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
VDS = 400V
8
V = 640V
DS
6
4
2
Note : ID = 4.8A
0
0 4 8 12 16 20 24 28
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000