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FQPF6P25
250V P-Channel MOSFET
April 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
• -4.2A, -250V, RDS(on) = 1.1@VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220F
FQPF Series
G!
S
!




!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQPF6P25
-250
-4.2
-1.78
-16.8
±30
540
-4.2
4.5
-5.5
45
0.36
-55 to +150
300
Typ Max
-- 2.78
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -250 V, VGS = 0 V
VDS = -200 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-250
--
--
--
--
--
--
-0.1
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -2.1 A
-- 0.82
VDS = -40 V, ID = -2.1 A (Note 4)
--
2.8
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 600
-- 115
-- 20
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -125 V, ID = -6.0 A,
RG = 25
(Note 4, 5)
VDS = -200 V, ID = -6.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
13
75
40
50
21
4.7
10.7
--
--
-1
-10
-100
100
-5.0
1.1
--
780
150
25
35
160
90
110
27
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -4.2 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -6.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 49mH, IAS = -4.2A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  -6.0A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- -4.2
-- -16.8
-- -5.0
170 --
1.1 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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Typical Characteristics
101 Top :
-1V5GSV
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
100
 Notes :
1. 250s Pulse Test
10-1 2. TC = 25
10-1 100 101
-VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
VGS = - 10V
VGS = - 20V
 Note : TJ = 25
4 8 12 16
-I , Drain Current [A]
D
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1400
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
800
C
iss
Coss
600
400
C
rss
 Notes :
1. VGS = 0 V
2. f = 1 MHz
200
0
10-1 100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150
25
-55
 Notes :
1. VDS = -40V
2. 250s Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150 25
 Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10 VDS = -125V
V = -200V
DS
8
6
4
2
 Note : ID = -6.0 A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000