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FQPF7N10L
100V LOGIC N-Channel MOSFET
December 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.
Features
• 5.5A, 100V, RDS(on) = 0.35@VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirments allowing
direct operation from logic drives
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQPF7N10L
100
5.5
3.89
22
± 20
50
5.5
2.3
6.0
23
0.15
-55 to +175
300
Typ Max
-- 6.52
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A4, December 2000

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.75 A
VGS = 5 V, ID = 2.75 A
VDS = 30 V, ID = 2.75 A
(Note 4)
1.0 --
--
0.275
0.300
-- 4.5
2.0
0.35
0.38
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 220 290
-- 55
72
-- 12
15
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 7.3 A,
RG = 25
-- 9
30
-- 100 210
-- 17
45
(Note 4, 5) -- 50 110
VDS = 80 V, ID = 7.3 A,
-- 4.6 6.0
VGS = 5 V
-- 1.0
--
(Note 4, 5) --
2.6
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 5.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 22
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7.3 A,
-- 70
dIF / dt = 100 A/µs
(Note 4) -- 140
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.5mH, IAS = 5.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A4, December 2000

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Typical Characteristics
V
GS
Top : 10.0 V
101 8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
1.5
1.2
V = 5V
GS
0.9
V = 10V
GS
0.6
0.3
Note : T = 25
J
0.0
0
5 10 15 20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
600
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
Notes :
300
C
iss
1. VGS = 0 V
2. f = 1 MHz
C
oss
200
C
100 rss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
175
100
25
-55
10-1
0
Notes :
1. VDS = 30V
2. 250μs Pulse Test
2468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
17525
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
8
V = 80V
DS
6
4
2
Note : ID = 7.3 A
0
012345678
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A4, December 2000