FQU11P06.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 FQU11P06 데이타시트 다운로드

No Preview Available !

FQD11P06 / FQU11P06
60V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -9.4A, -60V, RDS(on) = 0.185@VGS = -10 V
• Low gate charge ( typical 13 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
S
D!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8!"from case for 5 seconds
G!
!
!
#"
!
!
D
FQD11P06 / FQU11P06
-60
-9.4
-5.95
-37.6
± 30
160
-9.4
3.8
-7.0
2.5
38
0.3
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ Max Units
-- 3.28 °C/W
-- 50 °C/W
-- 110 °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B4, October 2002

No Preview Available !

Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 125°C
VGS = -25 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
-60
--
--
--
--
--
--
-0.07
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
-5.0
VGS = -10 V, ID = -4.7 A
-- 0.15 0.185
VDS = -30 V, ID = -4.7 A (Note 4)
--
4.9
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 420 550 pF
-- 195 250 pF
-- 45 60 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -30 V, ID = -5.7 A,
RG = 25
-- 6.5 25
-- 40 90
-- 15 40
ns
ns
ns
(Note 4, 5)
--
45 100 ns
VDS = -48 V, ID = -11.4 A,
-- 13 17 nC
VGS = -10 V
-- 2.0 -- nC
(Note 4, 5)
--
6.3
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -9.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- -37.6 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A
-- -- -4.0 V
trr Reverse Recovery Time
VGS = 0 V, IS = -11.4 A,
-- 83 -- ns
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -9.4A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD # -11.4A, di/dt # 300A/µs, VDD # BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width # 300µs, Duty cycle # 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B4, October 2002

No Preview Available !

Typical Characteristics
V
GS
Top : - 15.0 V
- 10.0 V
- 8.0 V
101 - 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
100
10-1
10-1
% Notes :
1. 250& s Pulse Test
2. T = 25$
C
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6
0.4
0.2
0.0
0
V = - 10V
GS
V = - 20V
GS
% Note : TJ = 25$
10 20 30 40
-ID , Drain Current [A]
50
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800 C
oss
Ciss % Notes :
600 1. VGS = 0 V
2. f = 1 MHz
400
Crss
200
0
10-1 100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
150$
100 25$
10-1
2
-55$
% Notes :
1. VDS = -30V
2. 250& s Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
150$ 25$
% Notes :
1. V = 0V
GS
2. 250& s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8 V = -48V
DS
6
4
2
% Note : ID = -11.4 A
0
0 2 4 6 8 10 12 14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B4, October 2002