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July 2016
FQD13N06L / FQU13N06L
N-Channel QFET® MOSFET
60 V, 11 A, 115 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 11 A, 60 V, RDS(on) = 115 m(Max) @ VGS = 10 V,
ID = 5.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
D 2, 4
44
1
2
3 D-PAK
1
23
I-PAK
1G
S3
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case5for Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD13N06LTM / FQU13N06LTU
FQU13N06LTU_WS
60
11
7
44
± 20
90
11
2.8
7.0
2.5
28
0.22
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
2.5
110
50
Unit
oC/W
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. 1.7
1
www.fairchildsemi.com

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Package Marking and Ordering Information
Part Number
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
Top Mark
FQD13N06L
FQU13N06L
FQU13N06LS
Package
D-PAK
I-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Tube
Reel Size
330 mm
N/A
N/A
Tape Width
16 mm
N/A
N/A
Quantity
2500 units
70 units
75 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60 --
--
V
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
-- -- 1 µA
-- -- 10 µA
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
VGS = 5 V, ID = 5.5 A
VDS = 25 V, ID = 5.5 A
1.0 --
2.5
-- 0.092 0.115
-- 0.115 0.145
-- 6
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 270 350
-- 95 125
-- 17 23
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 6.8 A,
RG = 25
(Note 4)
VDS = 48 V, ID = 13.6 A,
VGS = 5 V
(Note 4)
--
--
--
--
--
--
--
8 25
90 190
20 50
40 90
4.8 6.4
1.6 --
2.7 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/µs

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 , starting TJ = 25oC.
3. ISD 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
-- -- 11 A
-- -- 44 A
-- -- 1.5
V
-- 45
--
ns
-- 45 -- nC
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. 1.7
2
www.fairchildsemi.com

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 !    
Top : 10.V0GVS
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
101
3.5 V
Bottom: 3.0 V
100
Notes :
1. 250μ s Pulse Test
2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
300
200 VGS = 5V
VGS = 10V
100
Note : TJ = 25
0
0 10 20 30 40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
600
Coss
Ciss
400
200 Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
150
25
10-1
0
-55
Notes :
1.
2.
V25DS0μ=s25PVulse
Test
2468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
150
25
Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
8 VDS = 48V
6
4
2
Note : ID = 13.6A
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. 1.7
3
www.fairchildsemi.com

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 !       
1.2
1.1
1.0
0.9 Notes:
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50 0 50 100 150
TJ, JunctionTemperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102 is Limited by RDS(on)
100 µs
101 1 ms
10 ms
DC
100
10-1
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 5.5 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0 .5
100
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
Notes :
1 . Z θ J C( t ) = 4 . 5 /W M a x .
2 . D u t y Fa c t o r , D = t 1/t 2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. 1.7
4
www.fairchildsemi.com

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Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
V1G0GVSS
tp
DUT
VDD VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. 1.7
5
www.fairchildsemi.com