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FQD19N10 / FQU19N10
100V N-Channel MOSFET
August 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 15.6A, 100V, RDS(on) = 0.1@VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD19N10 / FQU19N10
100
15.6
9.8
62.4
± 25
220
15.6
5.0
6.0
2.5
50
0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Typ Max Units
-- 2.5 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. A, August 2000

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 125°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.1
--
--
--
--
--
--
1
10
100
-100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 7.8 A
VDS = 40 V, ID = 7.8 A (Note 4)
2.0 --
-- 0.078
-- 11
4.0
0.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 600 780
-- 165 215
-- 32
40
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 19 A,
RG = 25
-- 7.5
25
-- 150 310
-- 20
50
(Note 4, 5)
--
65
140
VDS = 80 V, ID = 19 A,
VGS = 10 V
(Note 4, 5)
--
--
--
19
3.9
9.0
25
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 15.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 19 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 15.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 19A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 15.6
-- 62.4
-- 1.5
78 --
200 --
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A, August 2000

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Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
101 5.0 V
Bottom : 4.5 V
100
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.30
0.24
V = 10V
GS
0.18
VGS = 20V
0.12
0.06
0.00
0
Note : TJ = 25
20 40 60
ID , Drain Current [A]
80
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
900
600
300
Ciss
Coss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150
100 25
10-1
2
-55
Notes :
1. VDS = 40V
2. 250μs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 V = 50V
DS
V = 80V
8 DS
6
4
2
Note : ID = 19A
0
0 4 8 12 16 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000