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FQD4P25 / FQU4P25
250V P-Channel MOSFET
December 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
Features
• -3.1A, -250V, RDS(on) = 2.1@VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 10.3 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
G!
S
!
▶▲
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
FQD4P25 / FQU4P25
-250
-3.1
-1.96
-12.4
± 30
280
-3.1
4.5
-5.5
2.5
45
0.36
-55 to +150
300
Typ Max
-- 2.78
-- 50
-- 110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. A2, December 2000

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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -250 V, VGS = 0 V
VDS = -200 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-250
--
--
--
--
--
--
-0.21
--
--
--
--
--
--
-1
-10
-100
100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.55 A
-- 1.63
VDS = -40 V, ID = -1.55 A (Note 4)
--
2.0
-5.0
2.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 325 420
-- 65 85
-- 10 13
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -125 V, ID = -4.0 A,
RG = 25
(Note 4, 5)
VDS = -200 V, ID = -4.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
9.5
60
14
27
10.3
2.7
5.2
30
130
40
65
14
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -3.1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
-- -12.4
A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.1 A
-- -- -5.0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -4.0 A,
-- 140
dIF / dt = 100 A/µs
(Note 4) -- 0.64
--
--
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -4.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000

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Typical Characteristics
101
Top :
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
100
Bottom :
-6.0 V
-5.5 V
10-1
10-2
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = - 10V
GS
V = - 20V
GS
4
2
Note : TJ = 25
0
0 3 6 9 12
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100 150
10-1
2
25
-55
Notes :
1. VDS = -50V
2. 250μs Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10 V = -125V
DS
VDS = -200V
8
6
4
2
Note : ID = -4.0 A
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000