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4-MBlT (256K x 16 512K x 8)
LOW-POWER BOOT BLOCK
FLASH MEMORY FAMILY
28F400BL-T B 28F004BL-T B
Y Low Voltage Operation for Very
Low-Power Portable Applications
VCC e 3 0V – 3 6V Read
VCC e 3 15V – 3 6V Program Erase
Y Expanded Temperature Range
b20 C to a70 C
Y x8 x16 Input Output Architecture
28F400BL-T 28F400BL-B
For High Performance and High
Integration 16-bit and 32-bit CPUs
Y x8-only Input Output Architecture
28F004BL-T 28F004BL-B
For Space Constrained 8-bit
Applications
Y Upgradeable to Intel’s SmartVoltage
Products
Y Optimized High Density Blocked
Architecture
One 16-KB Protected Boot Block
Two 8-KB Parameter Blocks
One 96-KB Main Block
Three 128-KB Main Blocks
Top or Bottom Boot Locations
Y Extended Cycling Capability
10 000 Block Erase Cycles
Y Automated Word Byte Write and Block
Erase
Command User Interface
Status Registers
Erase Suspend Capability
Y SRAM-Compatible Write Interface
Y Automatic Power Savings Feature
0 8 mA typical ICC Active Current in
Static Operation
Y Very High-Performance Read
150 ns Maximum Access Time
65 ns Maximum Output Enable Time
Y Low Power Consumption
15 mA Typical Active Read Current
Y Reset Deep Power-Down Input
0 2 mA ICC Typical
Acts as Reset for Boot Operations
Y Write Protection for Boot Block
Y Hardware Data Protection Feature
Erase Write Lockout During Power
Transitions
Y Industry Standard Surface Mount
Packaging
28F400BL JEDEC ROM
Compatible
44-Lead PSOP
56-Lead TSOP
28F004BL 40-Lead TSOP
Y 12V Word Byte Write and Block Erase
VPP e 12V g5% Standard
Y ETOXTM III Flash Technology
3 3V Read
Other brands and names are the property of their respective owners
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT INTEL CORPORATION 1995
November 1995
Order Number 290450-005

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28F400BL-T B 28F004BL-T B
Intel’s 4-Mbit Low Power Flash Memory Family is an extension of the Boot Block Architecture which includes
block-selective erasure automated write and erase operations and standard microprocessor interface The
4-Mbit Low Power Flash Memory Family enhances the Boot Block Architecture by adding more density and
blocks x8 x16 input output control very low power very high speed an industry standard ROM compatible
pinout and surface mount packaging The 4-Mbit low power flash family opens a new capability for 3V battery-
operated portable systems and is an easy upgrade to Intel’s 2-Mbit Low Power Boot Block Flash Memory
Family
The Intel 28F400BL-T B are 16-bit wide low power flash memory offerings These high density flash memories
provide user selectable bus operation for either 8-bit or 16-bit applications The 28F400BL-T and 28F400BL-B
are 4 194 304-bit non-volatile memories organized as either 524 288 bytes or 262 144 words of information
They are offered in 44-Lead plastic SOP and 56-Lead TSOP packages The x8 x16 pinout conforms to the
industry standard ROM EPROM pinout The Intel 28F004BL-T B are 8-bit wide low power flash memories
with 4 194 304 bits organized as 524 288 bytes of information They are offered in a 40-Lead TSOP package
which is ideal for space-constrained portable systems
These devices use an integrated Command User Interface (CUI) and Write State Machine (WSM) for simplified
word byte write and block erasure The 28F400BL-T 28F004BL-T provide block locations compatible with
Intel’s Low Voltage MCS-186 family i386TM i486TM microprocessors The 28F400BL-B 28F004BL-B provide
compatibility with Intel’s 80960KX and 80960SX families as well as other low voltage embedded microproces-
sors
The boot block includes a data protection feature to protect the boot code in critical applications With a
maximum access time of 150 ns these 4-Mbit low power flash devices are very high performance memories at
3 3V which interface to a wide range of low voltage microprocessors and microcontrollers A deep power-
down mode lowers the total VCC power consumption to 0 66 mW which is critical in handheld battery powered
systems such as Handy Cellular Phones For very high speed applications using a 5V supply refer to the Intel
28F400BX-T B 28F004BX-T B 4-Mbit Boot Block Flash Memory family datasheet
Manufactured on Intel’s 0 8 micron ETOX III process the 4-Mbit flash memory family provides world class
quality reliability and cost-effectiveness at the 4 Mbit density level
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28F400BL-T B 28F004BL-T B
1 0 PRODUCT FAMILY OVERVIEW
Throughout this datasheet 28F400BL refers to both
the 28F400BL-T and 28F400BL-B devices and
28F004BL refers to both the 28F004BL-T and
28F004BL-B devices The 4-Mbit flash family refers
to both the 28F400BL and 28F004BL products This
datasheet comprises the specifications for four sep-
arate products in the 4-Mbit flash family Section 1
provides an overview of the 4-Mbit flash family in-
cluding applications pinouts and pin descriptions
Sections 2 and 3 describe in detail the specific mem-
ory organizations for the 28F400BL and 28F004BL
products respectively Section 4 combines a de-
scription of the family’s principles of operations Fi-
nally section 5 describes the family’s operating
specifications
Product Family
x8 x16 Products
x8-Only Products
28F400BL-T
28F004BL-T
28F400BL-B
28F004BL-B
1 1 Designing for Upgrade to
SmartVoltage Products
Today’s high volume boot block products are up-
gradeable to Intel’s SmartVoltage boot block prod-
ucts that provide program and erase operation at 5V
or 12V VPP and read operation at 3V or 5V VCC
Intel’s SmartVoltage boot block products provide the
following enhancements to the boot block products
described in this datasheet
1 DU pin is replaced by WP to provide a means to
lock and unlock the boot block with logic signals
2 5V Program Erase operation uses proven pro-
gram and erase techniques with 5V g10% ap-
plied to VPP
3 Enhanced circuits optimize performance at 3 3V
VCC
Refer to the 2 4 or 8Mbit SmartVoltage Boot Block
Flash Memory datasheets for complete specifica-
tions
When you design with 12V VPP boot block products
you should provide the capability in your board de-
sign to upgrade to SmartVoltage products
Follow these guidelines to ensure compatibility
1 Connect DU (WP on SmartVoltage products) to
a control signal or to VCC or GND
2 If adding a switch on VPP for write protection
switch to GND for complete write protection
3 Allow for connecting 5V to VPP and disconnect
12V from the VPP line if desired
1 2 Main Features
The 28F400BL 28F004BL boot block flash memory
family is a very high performance 4-Mbit (4 194 304
bit) memory family organized as either 256 KWords
(262 144 words) of 16 bits each or 512 Kbytes
(524 288 bytes) of 8 bits each
Seven Separately Erasable Blocks including a
Hardware-Lockable boot block (16 384 Bytes)
two parameter blocks (8 192 Bytes each) and four
main blocks (1 block of 98 304 Bytes and 3 blocks
of 131 072 Bytes) are included on the 4-Mbit family
An erase operation erases one of the main blocks in
typically 3 4 seconds and the boot or parameter
blocks in typically 2 0 seconds independent of the
remaining blocks Each block can be independently
erased and programmed 10 000 times
The Boot Block is located at either the top (-T) or
the bottom (-B) of the address map in order to ac-
commodate different microprocessor protocols for
boot code location The hardware Iockable boot
block provides the most secure code storage The
boot block is intended to store the kernel code re-
quired for booting-up a system When the RP pin is
between 11 4V and 12 6V the boot block is unlocked
and program and erase operations can be per-
formed When the RP pin is at or below 4 1V the
boot block is locked and program and erase opera-
tions to the boot block are ignored
The 28F400BL products are available in the
ROM EPROM compatible pinout and housed in the
44-Lead PSOP (Plastic Small Outline) package and
the 56-Lead TSOP (Thin Small Outline 1 2mm thick)
package as shown in Figures 3 and 4 The
28F004BL products are available in the 40-Lead
TSOP (1 2mm thick) package as shown in Figure 5
The Command User Interface (CUI) serves as the
interface between the microprocessor or microcon-
troller and the internal operation of the 28F400BL
and 28F004BL flash memory products
Program and Erase Automation allow program
and erase operations to be executed using a two-
write command sequence to the CUI The internal
Write State Machine (WSM) automatically executes
the algorithms and timings necessary for program
and erase operations including verifications there-
by unburdening the microprocessor or microcontrol-
ler Writing of memory data is performed in word or
byte increments for the 28F400BL family and in byte
increments for the 28F004BL family typically within
11 ms
3