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28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile™ MEMORY
Includes Commercial and Extended Temperature Specifications
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 65 ns Access Time
n 1 Million Erase Cycles per Block
n 30.8 MB/sec Burst Write Transfer Rate
n 0.48 MB/sec Sustainable Write Transfer
Rate
n Configurable x8 or x16 Operation
n 56-Lead TSOP and SSOP Type I
Packages
n Backwards-Compatible with 28F016SA,
28F008SA Command Set
n Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel
28F008SA
Page Buffer Program
n 2 µA Typical Deep Power-Down
n 32 Independently Lockable Blocks
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology.
July 1997
Order Number: 290528-007
7/11/97 11:03 AM 29052807.DOC

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Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F016SV may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
or visit Intel’s Website at http:\\www.intel.com
COPYRIGHT © INTEL CORPORATION, 1997
*Third-party brands and names are the property of their respective owners.
CG-041493

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28F016SV FlashFile™ MEMORY
CONTENTS
PAGE
1.0 INTRODUCTION .............................................7
1.1 Enhanced Features......................................7
1.2 Product Overview.........................................7
2.0 DEVICE PINOUT.............................................9
2.1 Lead Descriptions ......................................11
3.0 MEMORY MAPS ...........................................15
3.1 Extended Status Registers Memory Map ...16
4.0 BUS OPERATIONS, COMMANDS AND
STATUS REGISTER DEFINITIONS ................17
4.1 Bus Operations for Word-Wide Mode
(BYTE# = VIH) ..............................................17
4.2 Bus Operations for Byte-Wide Mode
(BYTE# = VIL)...............................................17
4.3 28F008SA—Compatible Mode Command
Bus Definitions .............................................18
4.4 28F016SV—Performance Enhancement
Command Bus Definitions ............................19
4.5 Compatible Status Register........................21
4.6 Global Status Register ...............................22
4.7 Block Status Register.................................23
4.8 Device Configuration Code.........................24
PAGE
5.0 ELECTRICAL SPECIFICATIONS..................25
5.1 Absolute Maximum Ratings........................25
5.2 Capacitance ...............................................26
5.3 DC Characteristics (VCC = 3.3V ± 0.3V) .....29
5.4 DC Characteristics (VCC = 5V ± 0.5V)
5V ± 0.25V) ..................................................33
5.5 Timing Nomenclature .................................37
5.6 AC Characteristics—Read Only Operations38
5.7 Power-Up and Reset Timings.....................43
5.8 AC Characteristics for WE#—Controlled
Command Write Operations .........................44
5.9 AC Characteristics for CE#—Controlled
Command Write Operations) ........................49
5.10 AC Characteristics for WE#—Controlled
Page Buffer Program Operations..................54
5.11 AC Characteristics for CE#—Controlled
Page Buffer Program Operations..................56
5.12 Erase and Word/Byte Program
Performance.................................................58
6.0 MECHANICAL SPECIFICATIONS.................60
APPENDIX A: Device Nomenclature and
Ordering Information .....................................61
APPENDIX B: Ordering Information .................63
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