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28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
n 85 ns Access Time (tRAC)
Supports both Standard and Fast-
Page-Mode Accesses
n Multiplexed Address Bus
RAS# and CAS# Control Inputs
n No-Glue Interface to Many Memory
Controllers
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 0.33 MB/sec Write Transfer Rate
n x16 Architecture
n 56-Lead TSOP Type I Package
n Backwards-Compatible with 28F008SA
Command Set
n 2 µA Typical Deep Power-Down Current
n 1 mA Typical ICC Active Current in Static
Mode
n 32 Separately-Erasable/Lockable
64-Kbyte Blocks
n 1 Million Erase Cycles per Block
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selective block locking provide a highly flexible memory component suitable for resident flash component
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage
allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application software and fast access to large data tables. The 28F016XD is manufactured
on Intel’s 0.6 µm ETOX IV process technology.
December 1996
Order Number: 290533-004

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Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to
sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or
infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life
saving, or life sustaining applications.
Intel may make changes to specifications and product descriptions at any time, without notice.
The 28F016XD may contain design defects or errors known as errata. Current characterized errata are available upon request.
*Third-party brands and names are the property of their respective owners.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be
obtained from:
Intel Corporation
P.O. Box 7641
Mt. Prospect, IL 60056-7641
or call 1-800-879-4683
COPYRIGHT © INTEL CORPORATION, 1996
CG-041493

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28F016XD FLASH MEMORY
CONTENTS
PAGE
1.0 INTRODUCTION ......................................... 5
1.1 Product Overview...................................... 5
2.0 DEVICE PINOUT......................................... 6
2.1 Lead Descriptions ..................................... 9
3.0 MEMORY MAPS ....................................... 11
3.1 Extended Status Registers
Memory Map ........................................ 12
4.0 BUS OPERATIONS, COMMANDS AND
STATUS REGISTER DEFINITIONS.......... 13
4.1 Bus Operations ....................................... 13
4.2 28F008SA—Compatible Mode
Command Bus Definitions.................... 14
4.3 28F016XD—Enhanced Command
Bus Definitions ..................................... 15
4.4 Compatible Status Register .................... 16
4.5 Global Status Register ............................ 17
4.6 Block Status Register.............................. 18
5.0 ELECTRICAL SPECIFICATIONS ............. 19
5.1 Absolute Maximum Ratings..................... 19
5.2 Capacitance............................................ 20
5.3 Transient Input/Output Reference
Waveforms........................................... 21
5.4 DC Characteristics
(VCC = 3.3V ± 0.3V).............................. 22
5.5 DC Characteristics
(VCC = 5.0V ± 0.5V).............................. 25
PAGE
5.6 AC Characteristics
(VCC = 3.3V ± 0.3V)..............................28
Read, Write, Read-Modify-Write and
Refresh Cycles (Common Parameters) ....28
Read Cycle...............................................28
Write Cycle ...............................................29
Read-Modify-Write Cycle..........................30
Fast Page Mode Cycle .............................30
Fast Page Mode Read-Modify-Write
Cycle ........................................................30
Refresh Cycle...........................................31
Misc. Specifications ..................................31
5.7 AC Characteristics
(VCC = 5.0V ± 0.5V)..............................33
Read, Write, Read-Modify-Write and
Refresh Cycles (Common Parameters) ....33
Read Cycle...............................................34
Write Cycle ...............................................35
Read-Modify-Write Cycle..........................35
Fast Page Mode Cycle .............................35
Fast Page Mode Read-Modify-Write
Cycle ........................................................36
Refresh Cycle...........................................36
Misc. Specifications ..................................37
5.8 AC Waveforms ........................................38
5.9 Power-Up and Reset Timings..................50
5.10 Erase and Word Program Performance ..51
6.0 MECHANICAL SPECIFICATIONS ............52
APPENDIX A: Device Nomenclature and
Ordering Information .....................................53
APPENDIX B: Additional Information...............54
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