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  Green
B1100LB
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for Transient Protection
Ideally Suited for Automated Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 50A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
High Temperature Soldering: 260°C/10 Second at Terminal
Lead Free Finish, RoHS Compliant (Note 1)
Green Molding Compound (No Halogen and Antimony)
(Note 2)
Mechanical Data
Case: SMB
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Terminals: Lead Free Plating (Matte Tin Finish). Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Weight: 0.093 grams (approximate)
Top View
Bottom View
Ordering Information (Note 3)
Notes:
Part Number
B1100LB-13-F
Case
SMB
Packaging
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YWW
B1100LB
B1100LB = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year (ex: 02 for 2002)
WW = Week code (01 to 53)
Note: Device has a cathode band and may also have a cathode notch.
B1100LB
Document number: DS30077 Rev. 10 - 2
1 of 4
www.diodes.com
September 2010
© Diodes Incorporated

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B1100LB
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
@ IR = 0.5mA
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 120°C
@ TT = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
Value
100
70
1.0
2.0
50
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range (Note 5)
Symbol
RθJT
TJ, TSTG
Value
22
-65 to +175
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Forward Voltage Drop
Leakage Current (Note 6)
Total Capacitance
Symbol Min Typ Max
VF - - 0.75
IR
- - 0.5
- - 5.0
CT - - 100
Notes:
4. Valid provided that terminals are kept at ambient temperature.
5. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA.
6. Short duration pulse test used to minimize self-heating effect.
Unit Test Condition
V IF = 1.0A, TA = 25°C
mA VR = 100V, TA = 25°C
VR = 100V, TA = 100°C
pF VR = 4V, f = 1MHz
10
1.0
0.1
0.01
0
0.2 0.4
0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
280
240
f = 1.0MHz
Tj = 25°C
200
160
120
80
40
0
0.1 1
10 100
VR, DC REVERSE VOLTAGE (V)
Fig. 2 Total Capacitance vs. Reverse Voltage
B1100LB
Document number: DS30077 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated

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4
3
2
1
0
25 50 75 100 125 150 175
TT, TERMINAL TEMPERATURE (° C)
Fig. 3 Forward Current Derating Curve
Package Outline Dimensions
B
A
J
H
G
E
C
D
Suggested Pad Layout
B1100LB
50
40
30
20
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 4 Max Non-Repetitive Peak Forward Surge Current
SMB
Dim Min Max
A 3.30 3.94
B 4.06 4.57
C 1.96 2.21
D 0.15 0.31
E 5.00 5.59
G 0.05 0.20
H 0.76 1.52
J 2.00 2.50
All Dimensions in mm
Dimensions
Z
G
X
Y
C
Value (in mm)
6.8
1.8
2.3
2.5
4.3
B1100LB
Document number: DS30077 Rev. 10 - 2
3 of 4
www.diodes.com
September 2010
© Diodes Incorporated