2SC4954.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 2SC4954 데이타시트 다운로드

No Preview Available !

DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.3 pF TYP.
ORDERING INFORMATION
PART
NUMBER
2SC4954-T1
2SC4954-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
Collector to Emitter Voltage
VCEO
6
Emitter to Base Voltage
VEBO
2
Collector Current
IC 10
Total Power Dissipation
PT 60
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
˚C
˚C
PACKAGE DIMENSIONS
in millimeters
2.8±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; Electrostatic Sensitive Device.
The information in this document is subject to change without notice.
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
© 1993

No Preview Available !

2SC4954
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
ICBO
IEBO
hFE
fT
Cre
|S21e|2
NF
MIN.
75
7
TYP.
12
0.3
8.5
2.5
MAX.
0.1
0.1
150
0.5
4.0
UNIT
µA
µA
GHz
pF
dB
dB
TEST CONDITION
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 5 mA*1
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
VCB = 3 V, IE = 0, f = 1 MHz*2
VCE = 3 V, IC = 5 mA, f = 2.0 GHz
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
*1 Pulse Measurement; PW 350 µs, Duty Cycle 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
Marking
hFE
T82
T82
75 to 150
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
100
60 mW
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0 50 100 150
TA – Ambient Temperature – ˚C
0 0.5 1
VBE – Base to Emitter Voltage – V
2

No Preview Available !

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
30
20
500 µA
400 µA
300 µA
200 µA
10
IB = 100 µA
0 246
VCE – Collector to Emitter Voltage – V
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
f = 2 GHz
5V
12
3V
10
8
VCE = 1 V
6
4
2
0.5 1 2
5 10 20
IC – Collector Current – mA
NOISE FIGURE vs.
COLLECTOR CURRENT
5
f = 2 GHz
VCE = 3 V
4
3
2
1
0
0.5 1
2
5 10
IC – Collector Current – mA
20
2SC4954
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
5V
VCE = 3 V
0
0.1 0.5 1
5 10
50 100
IC – Collector Current – mA
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
10
f = 2 GHz
8
6 5V
3V
VCE = 1 V
4
2
0.5 1
5 10
IC – Collector Current – mA
50
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0
0.5 1
2
5 10
20
VCB – Collector to Base Voltage – V
3

No Preview Available !

2SC4954
S-PARAMETER
(VCE = 3 V, IC = 1 mA, ZO = 50 )
f
(GHz)
S11
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.9550
0.9140
0.8630
0.7880
0.7320
0.6720
0.5910
0.5430
0.4830
0.4240
0.3710
0.3390
0.3030
0.2460
0.1990
–9.0
–17.3
–25.8
–33.1
–39.1
–45.2
–50.5
–55.0
–57.4
–60.7
–66.9
–68.0
–71.3
–72.2
–68.9
(VCE = 3 V, IC = 3 mA, ZO = 50 )
f
(GHz)
S11
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
0.8730
0.7600
0.6530
0.6530
0.4750
0.4110
0.3470
0.3190
0.2830
0.2510
0.2020
0.1940
0.1850
0.1710
0.1430
–15.0
–26.2
–35.6
–35.6
–45.3
–48.3
–49.3
–50.4
–46.5
–45.6
–48.2
–47.4
–47.8
–39.0
–31.7
S21
MAG
ANG
3.2340
3.0460
2.9630
2.7870
2.6480
2.5390
2.3460
2.2000
2.0710
1.9590
1.8970
1.8100
1.6980
1.6530
1.5750
168.1
154.7
144.2
133.1
123.5
114.4
106.8
99.0
91.6
85.7
79.8
74.8
70.2
64.7
59.9
S21
MAG
ANG
7.3980
6.3600
5.5680
5.5680
4.1940
3.7680
3.3170
3.0080
2.7180
2.5040
2.3810
2.2280
2.0580
1.9740
1.8480
159.5
140.6
127.0
127.0
105.8
98.0
91.8
85.7
79.4
74.9
70.4
66.0
62.7
57.8
54.4
S12
MAG
ANG
0.0340
0.0650
0.0930
0.1180
0.1360
0.1570
0.1780
0.1870
0.2030
0.2090
0.2240
0.2440
0.2530
0.2550
0.2830
77.3
76.7
71.6
66.7
63.7
57.2
56.3
51.7
51.3
50.4
50.9
47.8
47.7
44.5
43.0
S12
MAG
ANG
0.0340
0.0580
0.0840
0.0840
0.1160
0.1330
0.1510
0.1600
0.1820
0.1980
0.2150
0.2290
0.2310
0.2620
0.2940
74.6
71.3
69.6
69.6
64.0
64.0
61.9
62.5
58.0
57.5
56.6
53.2
56.3
54.7
53.6
S22
MAG
ANG
0.9870
0.9640
0.9250
0.8850
0.8330
0.7820
0.7570
0.7250
0.6720
0.6490
0.6230
0.5970
0.5740
0.5610
0.5130
–6.8
–13.4
–19.5
–24.3
–28.9
–33.2
–37.1
–40.1
–43.2
–46.1
–49.1
–49.4
–54.1
–56.8
–61.6
S22
MAG
ANG
0.9590
0.8830
0.7970
0.7970
0.6690
0.6690
0.6060
0.5720
0.5510
0.5290
0.5170
0.5070
0.4920
0.4670
0.4160
–11.1
–18.9
–25.7
–25.7
–32.7
–32.7
–36.3
–37.6
–39.9
–41.8
–44.1
–45.2
–49.6
–51.7
–54.9
4

No Preview Available !

2SC4954
S-PARAMETER
(VCE = 3 V, IC = 5 mA, ZO = 50 )
f
(GHz)
S11
MAG
ANG
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.200
2.400
2.600
2.800
3.000
.775
.653
.527
.447
.359
.314
.279
.246
.219
.178
.165
.149
.137
.132
.103
–19.9
–32.4
–39.8
–45.7
–49.6
–50.3
–48.1
–46.9
–46.8
–43.6
–44.7
–37.6
–50.0
–47.6
–33.7
S21
MAG
ANG
10.233
8.408
6.761
5.598
4.670
4.118
3.630
3.246
2.885
2.747
2.581
2.382
2.244
2.138
2.044
153.0
133.2
119.0
108.5
100.0
92.7
87.1
82.1
78.1
73.7
68.8
64.8
61.4
59.0
55.3
S12
MAG
ANG
.029
.056
.073
.088
.111
.123
.140
.154
.178
.194
.201
.224
.241
.253
.265
78.0
66.1
70.0
67.6
66.9
67.5
66.8
64.1
62.0
62.9
62.0
60.1
60.9
57.7
55.3
S22
MAG
ANG
.931 –14.1
.815 –23.3
.717 –27.3
.639 –30.3
.595 –31.2
.565 –32.4
.545 –34.4
.519 –35.9
.521 –37.0
.500 –38.9
.478 –43.1
.455 –43.1
.471 –43.9
.449 –47.9
.438 –47.0
5