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Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High collector to emitter voltage VCEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 40V, IE = 0
IC = 10µA, IE = 0
0.1 µA
80 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
80
5
120 340
60
0.15 0.3
0.85 1.2
V
V
V
V
Transition frequency
Collector output capacitance
fT
Cob
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
120 MHz
10 20 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
R
S
hFE1 120 ~ 240 170 ~ 340
1

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Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=10
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
60
50
40
30
20
10
0
1 3 10 30 100 300 1000
Collector to base voltage VCB (V)
IC — VCE
1.2
1.0
0.8
IB=8mA
7mA
6mA
5mA
0.6 4mA
3mA
0.4 2mA
0.2 1mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SC5026
VCE(sat) — IC
10
IC/IB=10
3
1
0.3 Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
300
VCE=2V
250
200 Ta=75˚C
25˚C
150
–25˚C
100
50
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IE
200 VCB=10V
Ta=25˚C
160
120
80
40
0
–1 –3 –10 –30 –100 –300 –1000
Emitter current IE (mA)
2