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Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5036
base voltage 2SC5036A
VCBO
900
1000
Collector to 2SC5036
emitter voltage 2SC5036A
VCES
900
1000
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
800
7
2
1
0.3
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC5036
current
2SC5036A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
50
µA
50
VEB = 7V, IC = 0
50 µA
IC = 10mA, IB = 0
800
µA
VCE = 5V, IC = 0.1A
8
V
VCE = 5V, IC = 0.2A
3
IC = 0.2A, IB = 0.04A
1.5 V
IC = 0.2A, IB = 0.04A
1.5 V
VCE = 10V, IC = 0.05A, f = 1MHz
15 MHz
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
VCC = 250V
0.7 µs
2.5 µs
0.3 µs
1

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Power Transistors
40
(1)
30
20
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
25˚C 100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
1.2
TC=25˚C
IB=400mA
1.0 350mA
300mA
250mA
0.8 200mA
150mA
0.6 100mA
80mA
60mA
0.4 40mA
20mA
0.2
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
100
hFE — IC
VCE=5V
30
10
3
TC=–25˚C
25˚C
100˚C
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
ton
0.3
tf
0.1
0.03
0.01
0
0.2 0.4 0.6 0.8
Collector current IC (A)
2SC5036, 2SC5036A
VCE(sat) — IC
100
IC/IB=5
30
10 TC=100˚C
25˚C
3
–25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IC
100
VCE=10V
f=1MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
Area of safe operation (ASO)
10
Non repetitive pulse
TC=25˚C
3
1
t=10ms
0.3 0.3s
0.1
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
2SC5036, 2SC5036A
Area of safe operation, reverse bias ASO
1.6
1.4
1.2
IC
1.0
Lcoil=100µH
IC/IB=5
(IB1=–IB2)
TC=25˚C
0.8
0.6
0.4
0.2
0
0 200 400 600 800 1000 1200 1400 1600
Collector to emitter voltage VCE (V)
Reverse bias ASO measuring circuit
T.U.T
IB1
IC
Vin –IB2
tW
L coil
VCC
Vclamp
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
3