2SC5063.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SC5063 데이타시트 다운로드

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Power Transistors
2SC5063
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
500
500
400
7
3
1.5
0.5
25
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
100 µA
100 µA
400 V
15
8
1V
1.5 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = 10V, IC = 0.2A, f = 10MHz
ton
tstg
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 150V
tf
25 MHz
0.7 µs
2 µs
0.3 µs
1

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Power Transistors
40
35
30
(1)
25
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
15
10
5 (2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
IC/IB=5
10
3
25˚C
1
0.3
0.1
TC=–25˚C
100˚C
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
3
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
2.0
TC=25˚C
1.8
IB=200mA
1.6
1.4 120mA
1.2 100mA
80mA
1.0
60mA
0.8 40mA
0.6 30mA
0.4 20mA
0.2 10mA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SC5063
VCE(sat) — IC
10
IC/IB=5
3
TC=100˚C
1
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
1000
300
hFE — IC
VCE=5V
100
25˚C
TC=100˚C
30
–25˚C
10
3
1
0.01 0.03 0.1 0.3
1
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.001 0.003 0.01 0.03 0.1 0.3
Collector current IC (A)
1
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10
VCC=150V
TC=25˚C
3
ton
1
0.3 tstg
0.1 tf
0.03
0.01
0
0.5 1.0 1.5 2.0 2.5
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
3
IC
1
0.3
0.1
10ms
t=0.5ms
1ms
300ms
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
Area of safe operation, reverse bias ASO
8
Lcoil=200µH
7
IC/IB1=5
(IB1=–IB2)
TC=25˚C
6
5
4
3 ICP
2
IC
1
0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Reverse bias ASO measuring circuit
T.U.T
IB1
IC
Vin –IB2
tW
Rth(t) — t
102
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
10
(1)
(2)
2SC5063
L coil
VCC
Vclamp
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
3