2SC5078.pdf 데이터시트 (총 7 페이지) - 파일 다운로드 2SC5078 데이타시트 다운로드

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2SC5078
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 12 GHz Typ
High gain, low noise figure
PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
ADE-208-221
1st. Edition

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2SC5078
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
8
1.5
20
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector cutoff current
ICBO — — 10 µA VCB = 15 V, IE = 0
ICEO — — 1
mA VCE = 8 V, RBE =
Emitter cutoff current
IEBO — — 10 µA VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE 50 120 160
VCE = 5 V, IC = 10 mA
Collector output capacitance Cob — 0.3 0.8 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT 9 12 — GHz VCE = 5 V, IC = 5 mA
Power gain
PG 14 17 20 dB VCE = 5 V, IC = 10 mA,
f = 900 MHz
Noise figure
NF
1.6 2.5 dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Note: Marking is “ZC–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2

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Maximum Collector Dissipation Curve
150
100
50
0 50 100 150
Ambient Temperature Ta (°C)
2SC5078
DC Current Transfer Ratio vs.
Collector Current
250
VCE = 5V
200
150
100
50
0
0.1 1
10 100
Collector Current I C (mA)
Gain Bandwidth Product vs.
20 Collector Current
16
VCE = 5V
12
8
VCE = 1V
4
0
12
5 10 20
50
Collector Current I C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
5
IE =0
f = 1 MHz
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage VCB (V)
3

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2SC5078
Power Gain vs. Collector Current
20
VCE = 5V
f = 900 MHz
16
12
f = 2 GHz
8
4
0
12
5 10 20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
VCE = 1V
16 f = 1 GHz
12
8 f = 2 GHz
4
0
12
5 10 20
50
Collector Current I C (mA)
Noise Figure vs. Collector Current
5
4
f = 2GHz
3
2
f = 900MHz
1
VCE = 5V
0
12
5 10 20
50
Collector Current I C (mA)
S21 Parameter vs. Collector Current
20
f = 1 GHz
16
12
f = 2 GHz
8
4
VCE = 5V
0
12
5 10 20
Collector Current I C (mA)
50
4

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S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2 –5
–4
–3
–.4
–2
–.6
–.8 –1
–1.5
Condition: VCE= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
2SC5078
S21 Parameter vs. Frequency
90° Scale: 3 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: VCE= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
S12 Parameter vs. Frequency
90° Scale: 0.03 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Condition: VCE= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2 –5
–4
–3
–.4
–2
–.6
–.8 –1
–1.5
Condition: VCE= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 10 mA)
5