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2SC5101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5101
200
140
6
10
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
2SC5101
ICBO
VCB=200V
10max
IEBO
VEB=6V
10max
V(BR)CEO
IC=50mA
140min
hFE
VCE=4V, IC=3A
50min
VCE(sat)
IC=5A, IB=0.5A
0.5max
fT
VCE=12V, IE=–0.5A
20typ
COB
VCB=10V, f=1MHz
250typ
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Unit
µA
µA
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
(V) ()
60 12
IC
VBB1
VBB2
IB1
(A) (V) (V) (A)
IB2 ton tstg tf
(A) (µs) (µs) (µs)
5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
1.75
2.15
1.05
+0.2
-0.1
0.8
5.45±0.1
5.45±0.1
0.65
+0.2
-0.1
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
10
300mA
200mA
150mA
8 100mA
75mA
6
50mA
4
20mA
2
10mA
0
0 12 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
3
2
1
IC=10A
5A
0
0 0.5 1.0 1.5 2.0
Base Current IB(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
2
0
012
Base-Emitter Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
200
h FE– I C Temperature Characteristics (Typical)
300
(VCE=4V)
Typ 125˚C
100
100 25˚C
50
–30˚C
50
θ j-a– t Characteristics
3
1
0.5
20
0.02
0.1 0.5 1
Collector Current IC(A)
5 10
20
0.02
0.1 0.5 1
Collector Current IC(A)
5 10
0.1
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
Typ
20
10
0
–0.02
–0.1
–1
Emitter Current IE(A)
–10
Safe Operating Area (Single Pulse)
30
10
5
DC
1
0.5
Without Heatsink
Natural Cooling
0.1
3
5 10
50 100
Collector-Emitter Voltage VCE(V)
200
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150
127