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2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM100(TO3PF)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5124
1500
800
6
10(Pulse20)
5
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Symbol
ICBO1
ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=1200V
VCB=1500V
VEB=6V
IC=10mA
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 33.3
6
10 –5 1.2
IB2
(A)
–2.4
ton
(µs)
0.1typ
2SC5124
100max
1max
100max
800min
8min
4 to 9
5max
1.5max
3typ
130typ
Unit
µA
mA
µA
V
V
V
MHz
pF
tstg
(µs)
4.0typ
tf
(µs)
0.2typ
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
BC E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
10 2.4A
1.8A
8
1.2A
6 700mA
4 300mA
2 IB=100mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat)–IC Characteristics (Typical)
3
IC/IB=5:1
2
1
0
0.02 0.05 0.1
0.5 1
Collector Current IC(A)
5 10
I C– V BE Temperature Characteristics (Typical)
(VCE=5V)
10
8
6
4
2
0
0 0.5 1.0
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40
125˚C
(VCE=5V)
25˚C
10
5
3
0.02
–55˚C
0.1 0.5 1
Collector Current IC(A)
5 10
t stg• t f– I C Characteristics (Typical)
10
5 tstg
VCC 200V
IC:IB1:–IB2=5:1:2
1
0.5
tf
0.1
0.2
0.5 1
Collector Current IC(A)
5
10
θ j-a– t Characteristics
Safe Operating Area (Single Pulse)
30
10
5
1
0.5
0.1
5
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
128
Reverse Bias Safe Operating Area
30
10
5
1
Without Heatsink
Natural Cooling
0.5 L=3mH
–IB2=1A
Duty:less than 1%
0.1
50
100 500 1000
Collector-Emitter Voltage VCE(V)
2000
Pc–Ta Derating
100
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150