2SD1511.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD1511 데이타시트 다운로드

No Preview Available !

Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
For low-frequency output amplification
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 2000.
q A shunt resistor is omitted from the driver.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : P
Internal Connection
C
B
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1A*2
IC = 1.0A, IB = 1.0mA*2
IC = 1.0A, IB = 1.0mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE Rank classification
Rank
QR S
hFE
Marking Symbol
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
PQ PR PS
min
100
80
5
4000
E
typ max Unit
100 nA
100 nA
V
V
V
40000
1.8 V
2.2 V
150 MHz
*2 Pulse measurement
1

No Preview Available !

Transistor
PC — Ta
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
1.0 the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=1000
30
10
25˚C
3
Ta=–25˚C
1 75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
IC — VCE
2.4
Ta=25˚C
2.0
1.6 180µA
160µA
140µA
IB=200µA
120µA
1.2 100µA
0.8 80µA
60µA
0.4 40µA
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
hFE — IC
105
VCE=10V
Ta=75˚C
25˚C
104
–25˚C
103
102
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
2SD1511
VCE(sat) — IC
100
IC/IB=1000
30
10
3
25˚C Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
30
IE=0
f=1MHz
Ta=25˚C
25
20
15
10
5
0
1
3
10 30
100
Collector to base voltage VCB (V)
2