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Medium Power Transistor (32V, 1A)
2SD1664 / 2SD1858
Features
1) Low VCE(sat) = 0.15V(Typ.)
(lC / lB = 500mA / 50mA)
2) Compliments 2SB1132 / 2SB1237
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
2SD1664
4.5+00..12
1.6 +− 0.1
1.5+00..12
2SD1858
6.8 +− 0.2
2.5 +− 0.2
(1) (2) (3)
0.4 +− 0.1
1.5 +− 0.1
0.5 +− 0.1
3.0 +− 0.2
0.4 +− 0.1
1.5 +− 0.1
Abbreviated symbol: DA
ROHM : MPT3
EIAJ : SC-62
Denotes hFE
0.65Max.
0.4+00..015
0.5+− 0.1
(1) (2) (3)
2.54 2.54
(1) Base
(2) Collector
(3) Emitter
ROHM : ATV
1.05 0.45 +− 0.1
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
Collector current
Collector
2SD1664
power dissipation
2SD1858
Junction temperature
IC
PC
Tj
1 A (DC)
2 A (Pulse) 1
0.5
2 W 2
1 3
150 °C
Storage temperature
Tstg 55 to +150 °C
1 Pw=20ms, duty=1/2
2 When mounted on a 40 40 0.7 mm ceramic board.
3 When it is mounted on the copper clad PCB (1.7mm thick) with land size for collector 1
square CM or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current transfer ratio
hFE
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Output capacitance
Cob
Min.
40
32
5
120
Typ.
0.15
150
15
Max.
0.5
0.5
390
0.4
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=20V
VEB=4V
VCE=3V, IC=100mA
IC/IB=500mA / 50mA
VCE=5V, IE= 50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
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c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.12 - Rev.A

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2SD1664 / 2SD1858
Packaging specifications and hFE
Package
Taping
Code
T100
TV2
Type
Basic ordering
hFE unit (pieces)
1000
2500
2SD1664 QR
2SD1858 QR
hFE values are classified as follows :
Item
Q
R
hFE 120 to 270 180 to 390
Electrical characteristics curves
500
VCE=6V
200
Ta=100°C
100
50
25°C
20 55°C
10
5
2
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation
characteristics
500
2.5mA Ta=25°C
3.0mA
2.0mA
400 3.5mA
4.5mA 4.0mA
1.5mA
300
1.0mA
200
0.5mA
100
0 IB=0A
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output
characteristics
2000
1000
500
VCE=3V
200 Ta=100°C
25°C
100 55°C
50
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (ΙΙ)
0.5
Ta=25°C
0.2
0.1
0.05
0.02
IC/IB =50
20
10
0.01
1
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
Ta=25°C
VCE=5V
200
100
50
20
-1 -2
-5 -10 -20 -50 -100
EMITTER CURRENT : IE(mA)
Fig.7 Gain bandwidth product vs.
emitter current
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c 2009 ROHM Co., Ltd. All rights reserved.
100
Ta = 25°C
f = 1MHz
IE = 0A
50
20
10
5
0.5
1
2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.8 Collector output capacitance
vs. collector-base voltage
2/3
Data Sheet
2000
1000
500
Ta=25°C
200
VCE=3V
1V
100
50
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector
current ( Ι )
0.5 lC/lB = 10
0.2
0.1
0.05
0.02
Ta =100°C
25°C
40°C
0.01
1
2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
5
IC Max. (Pulse)
2
DC
1
0.5
100ms
0.2
0.1
0.05 Ta = 25°C
Single
0.02 nonrepetitive
0.01 pulse
0.1 0.2 0.5 1
2
5 10 20 50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
(2SD1664)
2009.12 - Rev.A

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2SD1664 / 2SD1858
100
10
1
0.1
0.001 0.01
0.1 1 10
TIME : t (s)
100 1000
Fig.10 Transient thermal resistance
(2SD1664)
2
1 IC Max. (Pulse)Pw=100ms
0.5 10ms
0.2 DC
0.1
0.05
When mounted on
a 1.7mm thick PCB
0.02 having collector foil
dementions 1cm2
0.01
0.5 1
2
5 10 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operating area
(2SD1858)
Data Sheet
200 Ta=25°C
100
50
20
10
5
2
0.001 0.01
0.1 1 10
TIME : t (s)
100 1000
Fig.12 Transient thermal resistance
(2SD1858)
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c 2009 ROHM Co., Ltd. All rights reserved.
3/3
2009.12 - Rev.A

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Notice
Notes
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R1102A