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Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
High forward current transfer ratio hFE: 2 000 to 10 000
Dielectric breakdown voltage of the package: > 5 kV
φ 3.2±0.1
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
60
5
8
4
40
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
Internal Connection
B
1: Base
2: Collector
3: Emitter
TO-220D Package
C
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage (DC value)
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2 *
VBE
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
VCB = 60 V, IE = 0
VCE = 30 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
VCE = 3 V, IC = 0.5 A
VCE = 3 V, IC = 3 A
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 12 mA
IC = 5 A, IB = 20 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3 A, IB1 = 12 mA, IB2 = −12 mA
VCC = 50 V
Note) *: Rank classification
Rank
P
Q
hFE2 4 000 to 10 000 2 000 to 5 000
E
Min
60
1 000
2 000
Typ Max
200
500
2
10 000
2.5
2.0
4.0
20
0.5
4.0
1.0
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1