2SD2453.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SD2453 데이타시트 다운로드

No Preview Available !

Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
For high current transfer ratio and power amplification
Features
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Base current
Collector power
dissipation
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
IB
PC
80
60
6
2
4
1
10
1
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) Non-repetitive peak collector current
Unit
V
V
V
A
A
A
W
°C
°C
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
4.6±0.1
1.0±0.1
0.1±0.05
0.5±0.1
0.75±0.1
2.3±0.1
(5.3)
(4.35)
(3.0)
12
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
3
Note) Self-supported type package is also prepared.
Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cutoff current (Base open) ICEO
Emiter-base cutoff current (Collector open) IEBO
Forward current transfer ratio *
hFE
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
IC = 25 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
60 V
100 µA
100 µA
100 µA
500 2 500
1V
50 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE 500 to 1 000 800 to 1 500 1 200 to 2 500
Publication date: September 2003
SJD00268AED
1

No Preview Available !

2SD2453
PC Ta
12
Without heat sink
10
8
6
4
2
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
IC VCE
1.0
IB=1.2mA
TC=25˚C
1mA
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC/IB=40
10
TC=100˚C
25˚C
1
–25˚C
0.1
hFE IC
104
TC=100˚C
25˚C
103
–25˚C
VCE=4V
102
10
IC VBE
5
4 25˚C
TC=100˚C
–25˚C
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
fT IC
104
VCE=12V
f=200MHz
TC=25˚C
103
102
10
0.01
0.01
0.1 1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
1
0.01 0.1
1
Collector current IC (A)
10
Safe operation area
100 Non repetitive pulse
TC=25˚C
10
ICP
IC
1
t=1ms
t=10ms
t=1s
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
2 SJD00268AED

No Preview Available !

Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL