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Transistor
2SD2459
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s Features
q High collector to emitter voltage VCEO.
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage VCEO
150
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
*1hFE1 Rank classification
VCB = 75V, IE = 0
0.1 µA
IC = 10µA, IE = 0
150
V
IC = 1mA, IB = 0
150
V
IE = 10µA, IC = 0
5
V
VCE = 2V, IC = 100mA
120 340
VCE = 2V, IC = 500mA
40
IC = 500mA, IB = 25mA*2
0.11 0.3
V
IC = 500mA, IB = 25mA*2
0.8 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 90 MHz
VCB = 10V, IE = 0, f = 1MHz
12 20 pF
*2 Pulse measurement
Rank
RS
hFE1
Marking Symbol
120 ~ 240 170 ~ 340
2ER 2ES
1

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Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=20
30
10
3
25˚C
1 Ta=–25˚C
100˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Cob — VCB
60
Ta=25˚C
f=1MHz
50 IE=0
40
30
20
10
0
1 3 10 30 100
Collector to base voltage VCB (V)
1200
1000
IC — VCE
Ta=25˚C
800 IB=8mA
7mA
6mA
5mA
600
4mA
3mA
400
2mA
200
1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2459
VCE(sat) — IC
10
IC/IB=20
3
1
0.3
Ta=100˚C
0.1 25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
fT — IE
500 200
VCE=2V
Ta=25˚C
VCB=10V
400 160
300
Ta=100˚C
200
25˚C
–25˚C
100
120
80
40
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
0
–1 –3
–10 –30 –100
Emitter current IE (mA)
2