2SD2460.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SD2460 데이타시트 다운로드

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Transistor
2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q Allowing supply with the radial taping.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
20
20
15
1.5
0.7
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*
IC = 500mA, IB = 50mA*
VCB = 20V, IE = –20mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
20
20
15
1000
typ max Unit
1 µA
10 µA
V
V
V
2500
0.15 0.4
V
55 MHz
10 15 pF
* Pulse measurement
1

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Transistor
PC — Ta
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2400
2100
1800
1500
1200
hFE — IC
VCE=10V
Ta=75˚C
25˚C
–25˚C
900
600
300
0
1 3 10 30 100 300 1000
Collector current IC (mA)
IC — VCE
240
Ta=25˚C
200
IB=100µA
160 90µA
80µA
70µA
120
60µA
50µA
80
40µA
30µA
40 20µA
10µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2460
VCE(sat) — IC
10
IC/IB=10
3
1
0.3
0.1
Ta=75˚C
0.03 25˚C
–25˚C
0.01
0.003
0.001
1
3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
13
10 30 100
Collector to base voltage VCB (V)
2