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Power Transistors
2SD2467
Silicon NPN epitaxial planar type
For power switching
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
130
80
7
6
3
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
10 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
45
90 260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5 V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5 V
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 10MHz
30 MHz
Turn-on time
Storage time
Fall time
ton IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
tstg
tf
VCC = 50V
0.5
2.5
0.15
µs
µs
µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1

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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=20
30
10
3
25˚C
1
0.3
TC=–25˚C
100˚C
0.1
0.03
0.0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
5
TC=25˚C
IB=100mA
4
50mA
3
30mA
25mA
2
20mA
10mA
1
5mA
2mA
0 1mA
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2467
VCE(sat) — IC
100
IC/IB=20
30
10
3
1 TC=100˚C
25˚C
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=2V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=10 (IB1=–IB2)
VCC=50V
10 TC=25˚C
3
1 tstg
ton
0.3 tf
0.1
0.03
0.01
0
0.4 0.8 1.2 1.6 2.0
Collector current IC (A)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
10ms
1 1ms
t=0.5ms
0.3 DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2